High-response NO2 resistive gas sensor based on bilayer MoS2 grown by a new two-step chemical vapor deposition method
Source abstract
Abstract
Abstract MoS 2 atomic layers with a lateral grain size of 50–100 μm were synthesized by a new two-step chemical vapor deposition method. The product was confirmed to be bilayer MoS 2 by the characterization of Raman spectroscopy, atomic force microscopy and high-resolution transmission electron microscopy. The growth mechanism and the influencing factors during the growth process of the bilayer MoS 2 were proposed and the so-obtained large lateral grain sizes of MoS 2 atomic layers were attributed to the high surface mobility and enhanced surface evaporation. The resistive gas sensors based on as-prepared bilayer MoS 2 films showed a p-type character and achieved a superior sensitivity of 2.6% to 1 ppm NO 2 gas at room temperature.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: 2D Materials and Applications · Gas Sensing Nanomaterials and Sensors · MXene and MAX Phase Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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