Fabrication and electrical characteristics of flash-sintered SiO2-doped ZnO-Bi2O3-MnO2 varistors
Source abstract
Abstract
Abstract The dense ZnO-Bi 2 O 3 -MnO 2 - x SiO 2 (ZBMS) varistors for x = 0, 1, 2, 3 wt% were fabricated by flash sintering method under the low temperature of 850 °C within 2 min. The sample temperature was estimated by a black body radiation model in the flash sintering process. The crystalline phase assemblage, density, microstructure, and electrical characteristics of the flash-sintered ZBMS varistors with different SiO 2 -doped content were investigated. According to the XRD analysis, many secondary phases were detected due to the SiO 2 doping. Meanwhile, the average grain size decrease with increasing SiO 2 -doped content. The improved nonlinear characteristics were obtained in SiO 2 -doped samples, which can be attributed to the ion migration and oxygen absorption induced by the doped SiO 2 . The flash-sintered ZBMS varistor ceramics for x = 2 wt% exhibited excellent comprehensive electrical properties, with the nonlinear coefficient of 24.5, the threshold voltage and leakage current of 385 V·mm −1 and 11.8 µA, respectively.
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Research context
OpenAlex topics: ZnO doping and properties · Transition Metal Oxide Nanomaterials · Advanced ceramic materials synthesis
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References (46)
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