4K-bit and microlithographic integration of organic nonvolatile resistive memory devices

Abstract We demonstrated 4K-bit microscale organic nonvolatile resistive memory devices fabricated with a 10 × 10 μm2 cell size in a 64 × 64 cross-bar array structure. This microscale integration was made via orthogonal photolithography processes using fluorinated photoresist and solvents and was achieved without causing damage to the underlying organic memory materials. Our microscale organic devices exhibited excellent memory performance that was retained more than 10 days with a high ON/OFF ratio (>107) and good endurance switching characteristics (>300 cycles). The demonstration of 4K-bit organic memory devices promises a possibility of highly-integrated microscale organic electronics applications.