journal article·2023-06-01Open access

Investigation on nano-absorbing precursors in the picosecond regime via the comparative study of HfO 2 /SiO 2 and Ta 2 O 5 /SiO 2 high-reflectivity coating damage

He Gong, Xiaofeng Liu, Chunxian Tao, Yuan’an Zhao, Kun Shuai, Dawei Li, Weili Zhang, Jian Sun, Li Zhou, You’en Jiang, Yun Cui, Dawei Zhang, Yaping Dai, Jianda Shao

Optical Materials Express· Volume 13· Issue 6

Abstract

Laser-induced damage to the final reflective and diffractive optics limits the total output energy of petawatt laser systems with pulse durations ranging from a few hundred femtoseconds (fs) up to a few tens of picoseconds (ps). In this study, the laser damage to HfO 2 /SiO 2 and Ta 2 O 5 /SiO 2 multilayer dielectric high-reflectivity (HR) coatings induced by a 1053 nm laser with a pulse width of 8.6 ps was studied to investigate the nano-absorbing precursors in ps regimes. The HfO 2 /SiO 2 HR coating exhibited stronger laser resistance than the Ta 2 O 5 /SiO 2 HR coating. Flat-bottom pits, pinpoints, and funnel pits were the three typical damage morphologies for the experimental HR coatings. The damage to the HfO 2 /SiO 2 HR coating was primarily dominated by flat-bottom pits, whereas dense pinpoints were the most significant damage for the Ta 2 O 5 /SiO 2 HR coating. The nano-absorbing precursors introduced by the ion-assisted deposition process were proved to be the damage precursors that trigger pinpoints under a strong electric field intensity (EFI). The nano-absorbing precursors located in the second EFI peak of the SiO 2 top layer induced the funnel pits. The funnel pits were expected to be the previous stage of the flat-bottom pits. After they grew along the upward-sloping crack and separated from the interface, the flat-bottom pits were formed. In addition, poor-binding interfaces promoted the formation of flat-bottom pits.
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Research context

OpenAlex topics: Laser Material Processing Techniques · Laser-induced spectroscopy and plasma · Diamond and Carbon-based Materials Research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

University of Shanghai for Science and Technology

University of Chinese Academy of Sciences

Wuhan University of Technology

Shanghai Institute of Optics and Fine Mechanics

China Academy of Engineering Physics

Funding

Science and Technology Commission of Shanghai Municipality · Bureau of International Cooperation, Chinese Academy of Sciences · China Postdoctoral Science Foundation · National Natural Science Foundation of China · CAS Special Research Assistant Project

References (39)

Show source-provided references
1. Barty · Nucl. Fusion · 2004 · 44 · S26610.1088/0029-5515/44/12/S18 ↗
2. Danson · High Power Laser Sci. Eng. · 2015 · 3 · e310.1017/hpl.2014.52 ↗
3. Borghesi · IEEE Trans. Plasma Sci. · 2008 · 36 · 183310.1109/TPS.2008.927142 ↗
4. Chen · High Power Laser Sci. Eng. · 2022 · 10 · e3210.1017/hpl.2022.19 ↗
5. Li · High Power Laser Sci. Eng. · 2022 · 10 · 110.1017/hpl.2022.17 ↗
6. Radier · High Power Laser Sci. Eng. · 2022 · 10 · e2110.1017/hpl.2022.11 ↗
7. Ma · Chin. Opt. Lett. · 2021 · 19 · 08140310.3788/COL202119.081403 ↗
8. Laurence · J. Appl. Phys. · 2020 · 128 · 07110110.1063/1.5131174 ↗
9. Negres · Proc. SPIE · 2015 · 9632 · 96320610.1117/12.2195528 ↗
10. Sozet · Opt. Lett. · 2015 · 40 · 209110.1364/OL.40.002091 ↗
11. Negres · Opt. Eng · 2016 · 56 · 01100810.1117/1.OE.56.1.011008 ↗
12. Kozlov · Proc. SPIE · 2017 · 10014 · 100141Y10.1117/12.2242832 ↗
13. Kozlov · Sci. Rep. · 2019 · 9 · 60710.1038/s41598-018-37223-0 ↗
14. Li · Opt. Laser Technol. · 2018 · 106 · 37210.1016/j.optlastec.2018.04.028 ↗
15. Gallais · Appl. Opt. · 2011 · 50 · C17810.1364/AO.50.00C178 ↗
16. Ly · Opt. Express · 2017 · 25 · 1516110.1364/OE.25.015161 ↗
17. Laurence · Opt. Express · 2017 · 25 · 1538110.1364/OE.25.015381 ↗
18. Laurence · J. Appl. Phys. (Melville, NY, U. S.) · 2018 · 124 · 08310210.1063/1.5041011 ↗
19. Sozet · Opt. Lett. · 2016 · 41 · 234210.1364/OL.41.002342 ↗
20. Sozet · Opt. Express · 2017 · 25 · 2576710.1364/OE.25.025767 ↗
21. Olle · Opt. Lett. · 2020 · 45 · 402410.1364/OL.398481 ↗
22. Diop · Opt. Express · 2022 · 30 · 1773910.1364/OE.456120 ↗
23. Stolz · Opt. Eng. · 2018 · 57 · 110.1117/1.OE.57.12.121910 ↗
24. Stolz · Opt. Eng. · 2012 · 51 · 12181810.1117/1.OE.51.12.121818 ↗
25. Sekido · Electron. Comm. Jpn. Pt. II · 1994 · 77 · 5410.1002/ecjb.4420770607 ↗
26. Škoda · Proc. SPIE · 2017 · 10447 · 8210.1117/12.2280628 ↗
27. Bass · Appl. Opt. · 2016 · 55 · 313110.1364/AO.55.003131 ↗
28. Porteus · Appl. Opt. · 1984 · 23 · 379610.1364/AO.23.003796 ↗
29. Natoli · Appl. Opt. · 2002 · 41 · 315610.1364/AO.41.003156 ↗
30. Jia · J. Appl. Phys. (Melville, NY, U. S.) · 2006 · 100 · 02310310.1063/1.2215217 ↗
31. Keldysh · Sov. Phys. JETP · 1965 · 20 · 1307
32. Tien · Phys. Rev. Lett. · 1999 · 82 · 388310.1103/PhysRevLett.82.3883 ↗
33. Jing · Appl. Surf. Sci. · 2012 · 258 · 474110.1016/j.apsusc.2012.01.070 ↗
34. Li · Nucl. Instrum. Methods Phys. Res., Sect. B · 2011 · 269 · 54410.1016/j.nimb.2011.01.005 ↗
35. Cui · Appl. Surf. Sci. · 2014 · 290 · 7110.1016/j.apsusc.2013.10.191 ↗
36. Schlett · Anal. Bioanal. Chem. · 2002 · 374 · 61410.1007/s00216-002-1539-9 ↗
37. Grehl · Appl. Surf. Sci. · 2003 · 203204 · 27710.1016/S0169-4332(02)00653-0 ↗
38. Weakley · Proc. SPIE · 1999 · 3578 · 13710.1117/12.344420 ↗
39. Jena · Appl. Opt. · 2014 · 53 · 85010.1364/AO.53.000850 ↗