Proposed design principle of fluoride-based materials for deep ultraviolet light emitting devices
Source abstract
Abstract
Abstract In this paper, the design principle of fluoride-based devices for deep ultraviolet emission is presented. Variations in band structure and lattice constant of LiBaxCaySr(1−x−y)F3 and Li(1−x)KxBa(1−y)MgyF3 are studied using ab initio calculations based on local density approximation. Results suggest that lattice-matched double-heterostructures of direct-band-gap compounds LiBaxCaySr(1−x−y)F3 on LiSrF3 and Li(1−x)KxBa(1−y)MgyF3 on either LiBaF3 or KMgF3 are sufficiently feasible to fabricate.
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Research context
OpenAlex topics: Inorganic Fluorides and Related Compounds · Ga2O3 and related materials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (18)
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