journal article·2007-09

Proposed design principle of fluoride-based materials for deep ultraviolet light emitting devices

Nobuhiko Sarukura, Hidetoshi Murakami, Elmer Estacio, Shingo Ono, Riadh El Ouenzerfi, Marilou Cadatal, Takeshi Nishimatsu, Noriaki Terakubo, Hiroshi Mizuseki, Yoshiyuki Kawazoe, Akira Yoshikawa, Tsuguo Fukuda

Optical Materials· Volume 30· Issue 1
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Abstract

Abstract In this paper, the design principle of fluoride-based devices for deep ultraviolet emission is presented. Variations in band structure and lattice constant of LiBaxCaySr(1−x−y)F3 and Li(1−x)KxBa(1−y)MgyF3 are studied using ab initio calculations based on local density approximation. Results suggest that lattice-matched double-heterostructures of direct-band-gap compounds LiBaxCaySr(1−x−y)F3 on LiSrF3 and Li(1−x)KxBa(1−y)MgyF3 on either LiBaF3 or KMgF3 are sufficiently feasible to fabricate.
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Research context

OpenAlex topics: Inorganic Fluorides and Related Compounds · Ga2O3 and related materials · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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