journal article·2017-06

Growth and scintillation properties of Eu doped LiSrI3/LiI eutectics

Kei Kamada, Hiroyuki Chiba, Masao Yoshino, Akihiro Yamaji, Yasuhiro Shoji, Shunsuke Kurosawa, Yuui Yokota, Yuji Ohashi, Akira Yoshikawa

Optical Materials· Volume 68
Publisher page

Abstract

Abstract Eu doped LiSrI 3 /LiI eutectics were grown by the Bridgman method in a quartz ample with 4 mm inner diameter. and their directionally solidified eutectic system has been investigated. Growth rate was 0.3 mm/min. The eutectic showed well aligned eutectic structure and optically transparent. Grown Eu doped LiSrI3/LiI eutectic shows 400 nm emission ascribed to Eu 2+ 4f-5d transition under X-ray excitation. The light yield was around 26,000 photon/MeV for 662 keV gamma-ray and 35,000 photons for 5.5 MeV alpha-ray.
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Research context

OpenAlex topics: Radiation Detection and Scintillator Technologies · Nuclear Physics and Applications · Advanced Semiconductor Detectors and Materials

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