120 GHz bandwidth of UV graphene/AlGaN/AlN/GaN/AlGaNP-I-N photodetector
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OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Semiconductor Quantum Structures and Devices
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References (56)
Show source-provided references
1. Ultraviolet light-emitting diodes based on group three nitrides10.1038/nphoton.2007.293 ↗
2. III–Nitride UV device10.1143/JJAP.44.7191 ↗
3. AlGaN/GaN HEMTs—an overview of device operation and applications
4. Comprehensive review of semiconductor ultraviolet photodetectors: from thin film to one-dimensional nanostructures10.3390/s130810482 ↗
5. Wide-bandgap semiconductor ultraviolet photodetectors10.1088/0268-1242/18/4/201 ↗
6. Semiconductor ultraviolet detectors10.1063/1.362677 ↗
7. High-performance visible- blindGaN-based p–i–n photodetectors10.1109/JSTQE.2004.831681 ↗
8. GaN: processing, defects, and devices10.1063/1.371145 ↗
9. Solar blind UV region and UV detector development objectives10.1117/12.344560 ↗
10. Semiconductor ultraviolet detectors10.1063/1.362677 ↗
11. AlxGa1−xN (0⩽x⩽1) ultravioletphotodetectors grown on sapphire by metal-organic chemical-vapor deposition10.1063/1.118450 ↗
12. Visible blind GaN p–i–n photodiodes10.1063/1.121631 ↗
13. High speed, low noise ultraviolet photodetectors based on GaN p–i–n and AlGaN(p)-GaN(i)-GaN(n)structures10.1063/1.119366 ↗
14. Appleton B R and Hebard A F “rectification at graphene-semiconductor interfaces: zero-gap semiconductor-based diodes”
15. Coaxing graphene to be piezoelectric10.1063/1.3676084 ↗
16. Graphene/GaN Schottky diodes: stability at elevated temperatures10.1063/1.3628315 ↗
17. Appleton B R and HebardA F “High efficiency graphene solar cells by chemical doping10.1021/nl204414u ↗
18. High responsivity, fast ultraviolet photodetector fabricated from ZnO nanoparticle–graphene core–shell structure10.1039/c3nr00369h ↗
19. Graphene-based Schottky junction solar cells10.1039/c1jm11441g ↗
20. Enhancing performance of WDM-RoFSO communication system utilizing dual channel technique for 5G applications10.1007/s11082-022-03857-8 ↗
21. Haroun Errachid Adardour, Samir Kameche, Mehtab Singh A MIMO-Enabled Free Space Optical Link under Log-Normal Fading/Gamma-Gamma Channel: Exploring an Optimal Modulation Scheme Int. J. Opt. Article ID 8020925 , https://doi.org/10.1155/2023/8020925.10.1155/2023/8020925 ↗
22. Performance analysis of free space optical networks using the beta-average recursive estimator10.1007/s11277-020-07499-5 ↗
23. Novel networks architecture using CWDM/DWDM/5G mmWave system over FSOC channel with RISP performance analysis10.1007/s11082-023-05044-9 ↗
24. An efficient hybrid solar and electromagnetic harv-esting system for autonomous operation of small sensor
25. Temperature and SiO2/4H-SiC interface trap effects on the electrical characteristics of low breakdown voltage MOSFETs10.1007/s00339-019-2606-9 ↗
26. Improving the efficiency of a-Si: H/c-Si thin heterojunction solar cells by using both antireflection coating engineering and diffraction grating10.1016/j.ijleo.2019.01.032 ↗
27. Multiobjective optimization of design of 4H-SiC power MOSFETs for specific applications10.1007/s11664-019-07142-5 ↗
28. Analytical model for the light trapping effect on ZnO: Al/c-Si/SiGe/c-Si solar cells with an optimized design
29. 2016
30. “Hybrid Graphene/Silicon Schottky photodiode with intrinsic gating effect”10.1088/2053-1583/aa6aa0 ↗
31. Moderate phonon dispersion shown by the temperature dependence of fundamental band gaps of various elemental and binary semiconductors including wide-band gap materials10.1063/1.1287601 ↗
32. Dispersion-related assessments of temperature dependences for the fundamental band gap of hexagonal GaN10.1063/1.1402147 ↗
33. Temperature dependence of energy gaps of some III-V semiconductors10.1103/PhysRevB.6.2330 ↗
34. Temperature and isotopic mass dependence of the direct band gap in semiconductors: LCAO calculations10.1002/1521-3951(200007)220:1<33::AID-PSSB33>3.0.CO;2-J ↗
35. High-Temperature forward and reverse current transport mechanisms of AlGaN-based solar-blind UV photodetector10.1109/TED.2022.3211489 ↗
36. Wide bandgap UV photodetectors: a short review of devices and Applications10.1117/12.705393 ↗
37. ZnO-Based ultraviolet photodetectors10.3390/s100908604 ↗
38. Schuh · 2017
39. Microwave photonics combines two worlds10.1038/nphoton.2007.89 ↗
40. Microwave photonics10.1109/JLT.2008.2009551 ↗
41. Wireless sub-THz communication system with high data rate10.1038/nphoton.2013.275 ↗
42. AlGaN-Based self-powered solar-blind UV focal plane array imaging photosensors: material growth, device preparation, and functional verification10.1109/JSEN.2023.3253724 ↗
43. Advances in terahertz communications accelerated by photonics10.1038/nphoton.2016.65 ↗
44. Cutting-edge terahertz technology10.1038/nphoton.2007.3 ↗
45. Investigation of AlGaN-Delta–GaN-Based UV photodiodes in a metal–semiconductor–metal configuration for efficient and fast solar blind UV sensing10.1109/JQE.2023.3274705 ↗
46. Alliance · 2016
47. Picosecond photoresponse in van der Waals heterostructures10.1038/nnano.2015.227 ↗
48. Low-noise GaN ultraviolet p–i–n photodiodes on GaN substrates10.1063/1.3148812 ↗
49. Magnesium ion-implantation-based gallium nitride p–i–n photodiode for visible-blind ultraviolet detection10.1364/PRJ.7.000B48 ↗
50. High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si10.1109/JQE.2020.2981043 ↗
51. Ultraviolet photodetectors using transparent gate AlGaN/GaN high electron mobility transistor on silicon substrate
52. High responsivity and speed of 3D graphene/InGaAs/InAs/InAlAs/Insb/InP HEMT photodetector10.1007/s11664-020-08451-w ↗
53. An ultra-sensitive AlGaN/AlN/GaN/AlGaN photodetector: proposal and investigation10.1016/j.ijleo.2020.164797 ↗
54. High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching10.1063/1.3595303 ↗
55. High performance UV detector based on AlGaN/GaN junction heterostructure fieldeffect transistor with a p-GaN gate10.1002/pssc.200880815 ↗
56. Fabrication and characterization of graphene/AlGaN/GaN ultraviolet Schottky photodetector10.1088/0022-3727/49/27/275105 ↗