New methods for determining the band gap behavior of ZnO
Source abstract
Abstract
Abstract Two new methods to determine the band gap behavior of ZnO are proposed. One is fitting based on the relationship of absorption coefficient and reflection, in which photon energy (hv) can be expressed as a function of hν ⋅ ln[(Rmax − Rmin)/(R − Rmin)]. This method can give some characteristic parameters of ZnO such as E g ′ (the sum or difference of band gap (Eg) and phonon energy (Ep)), transition type and transition constant. The other method is fitting based on the relationship between absorption coefficient and transmission as well as reflection, in which hv is expressed as a function of hν ⋅ ln[(1 − R)2/T]. In the latter fitting, we separated the wavelength scope into two independent wavelength ranges for improving analysis accuracy. Based on the second method, the band gap Eg and phonon energy Ep that provide the energy for indirect transition when hv
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (28)
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