Effects of post-annealing treatment on the light emission properties of ZnO thin films on Si

Abstract ZnO thin films on (1 0 0) p-type silicon substrates have been deposited by pulsed laser deposition technique. In order to investigate the effect of post-annealing treatment with oxygen on the optical property of ZnO thin films, films have been annealed at various substrate temperatures after deposition. After post-annealing treatment in the oxygen ambient, the stoichiometry of ZnO film has been observed to be improved which results in increasing ultra-violet (UV) emission intensity of photoluminescence (PL).