Electrical characterisation of photosensitive Si/W–Ge oxide composite heterojunction
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (81)
Show source-provided references
1. The structure, device physics, and material properties of thin film electroluminescent displays10.1016/S0927-796X(97)00010-7 ↗
2. Effects of annealing temperature on a ZnO thin film-based ultraviolet photodetector10.1088/1402-4896/ac4634 ↗
3. Morpho-structural and optoelectronic properties of diamond like carbon–germanium (DLC-Ge) composite thin films produced by magnetron sputtering10.1016/j.optmat.2022.112229 ↗
4. Sol-gel thin films for corrosion protection10.1016/0272-8842(95)94466-N ↗
5. Electrical characterization of metal/diamond-like carbon/inorganic semiconductor MIS Schottky barrier diodes10.1016/j.mee.2015.05.001 ↗
6. Electronic properties of Al/p-Si/C70/Au MIS-type diode10.1016/j.spmi.2013.03.028 ↗
7. Laser-patterned carbon coatings on flexible and optically transparent plastic substrates for advanced biomedical sensing and implant applications10.1039/D1TC05176H ↗
8. Effect of nickel dopant on structural morphological and optical characteristics of Fe3O4 nanoparticles10.31788/RJC.2019.1225054 ↗
9. DLC-based wear protection on magnetic storage media10.1016/S0925-9635(02)00166-8 ↗
10. Erkovan · 2013
11. Structural and optoelectronic characterization of Cu2CoSnS4 quaternary functional photodetectors10.1016/j.ijleo.2020.164724 ↗
12. Cd dopant effect on structural and optoelectronic properties of TiO2 solar detectors10.1007/s10854-020-05000-3 ↗
13. Transparent metal oxide films based sensors for solar tracking applications10.1016/j.compositesb.2016.02.039 ↗
14. Highly rectifying p-ZnCo2O4/n-ZnO heterojunction diodes10.1063/1.4861648 ↗
15. Investigation of microstructural, optical and dc electrical properties of spin coated Al: WO3 thin films for n-Al: WO3/p-Si heterojunction diodes10.1016/j.ijleo.2017.07.049 ↗
16. Ultraviolet photodetector based on Mg0. 67Ni0. 33O thin film on SrTiO310.1002/pssr.202000175 ↗
17. Structural, electrical and optical characterization of Mn doped CdO photodiodes10.1016/j.molstruc.2019.127235 ↗
18. The study of exchange bias effect in Pt x Co1− x/CoO bilayers10.1007/s10948-017-4127-0 ↗
19. Optoelectronic properties of ZnO: TiO2 nanocomposite thin films
20. Metal oxides for optoelectronic applications10.1038/nmat4599 ↗
21. Structural and magnetic properties of wurtzite CoO thin films10.1088/0022-3727/41/13/135004 ↗
22. Magnetotransport properties of Fe3O4 thin films for applications in spin electronics10.1016/j.mee.2007.01.120 ↗
23. Electrical characterization of solar sensitive zinc oxide doped-amorphous carbon photodiode10.1016/j.ijleo.2018.10.008 ↗
24. Magnetic linear dichroism studies of in situ grown NiO thin films10.1016/j.jmmm.2006.07.020 ↗
25. A review of Fe3O4 thin films: synthesis, modification and applications10.1016/j.jmst.2018.01.011 ↗
26. Growth angle-dependent tunable work function and optoelectronic properties of MoOx thin films10.1016/j.apsusc.2019.144958 ↗
27. Investigation of the effect of light on the electrical parameters of Si/TiO2 heterojunctions produced by anodic oxidation on p-type Si wafer10.1007/s10854-022-08484-3 ↗
28. ZnO nanoparticles-based vacuum pressure sensor10.1088/1361-6528/aba39d ↗
29. Nanostructured tungsten oxide thin film devices: from optoelectronics and ionics to iontronics10.1039/C9TC04489B ↗
30. Analysis of amorphous tungsten oxide thin films deposited by magnetron sputtering for application in transparent electronics10.1016/j.apsusc.2021.151151 ↗
31. Tungsten oxide materials for optoelectronic applications10.1002/adma.201601109 ↗
32. Defect engineering of codoped visible light photosensitized TiO2: WN thin-films for efficient electro-photocatalysis10.1016/j.jallcom.2020.155023 ↗
33. Structural studies of tungsten–titanium oxide thin films10.1006/jssc.1996.0051 ↗
34. Surface, optical and electrochemical performance of indium-doped ZnO/WO3 nano-composite thin films10.1007/s42452-020-03580-7 ↗
35. Binary metal oxide MoO3-TiO2 and MoO3-WO3 thin film gas sensors for environmental applications
36. A comparative study of heterostructured CuO/CuWO4 nanowires and thin films10.1016/j.jcrysgro.2017.10.011 ↗
37. NOx sensing with n-type WO3-CuWO4 composites10.1149/1.3653926 ↗
38. Optical properties of nanoporous germanium thin films10.1021/acsami.5b02089 ↗
39. Enhanced photocurrent of Ge-doped InGaO thin film transistors with quantum dots10.1063/1.4906423 ↗
40. Effect of Ge doping on the electrical properties of amorphous Zn–Sn–O thin films10.1016/j.cap.2020.06.025 ↗
41. Interfacial modification in Si/CdO heterojunction by Ge doping for optoelectronic applications10.1016/j.solidstatesciences.2013.08.001 ↗
42. Investigation of TiN thin film oxidation depending on the substrate temperature at vacuum break10.1116/1.4960648 ↗
43. Electronic characterization of Au/DNA/ITO metal-semiconductor-metal diode and its application as a radiation sensor10.1371/journal.pone.0145423 ↗
44. The comparison of the methods used for determining of Schottky diode parameters in a wide temperature range
45. Determination of contact parameters of Au/Carmine/n-Si Schottky device10.1016/j.tsf.2010.06.019 ↗
46. Metal-semiconductor contacts
47. Synthesis of a new 1, 3, 4-thiadiazole-substituted phenanthroimidazole derivative, its growth on glass/ITO as a thin film and analysis of some surface and optoelectronic properties10.1039/D1NJ04375G ↗
48. Extraction of Schottky diode parameters from forward current‐voltage characteristics10.1063/1.97359 ↗
49. Electrical and carrier transport properties of Ti/α-amylase/p-InP MPS junction with a α-amylase polymer interlayer
50. Fatih, Ü., Investigation of some optical and electrical properties of InSe thin film, a window layer for photovoltaic cell growth on glass/GaSe substrate by M-CBD method. Karadeniz Fen Bilimleri Dergisi. 11(1): p. 297-306.10.31466/kfbd.930609 ↗
51. A comparison of electrical parameters of Au/n-Si and Au/(CoSO4–PVP)/n-Si structures (SBDs) to determine the effect of (CoSO4–PVP) organic interlayer at room temperature10.1007/s10854-019-01257-5 ↗
52. Dilute nitride resonant-cavity light emitting diode10.1016/j.optlastec.2019.105888 ↗
53. Space charge limited current mechanism (SCLC) in the graphene oxide–Fe3O4 nanocomposites/n-Si heterojunctions10.1016/j.jallcom.2015.01.117 ↗
54. Development of a hybrid photodetector device between pyruvic acid (CH3COCOOH) and silicon10.1088/1361-6641/ac1a2b ↗
55. Structure and transport mechanisms of Si/porous Si n–p junctions prepared by liquid phase epitaxy10.1016/j.apsusc.2008.09.083 ↗
56. On the mechanism of current-transport in Cu/CdS/SnO2/In–Ga structures10.1016/j.jallcom.2011.02.033 ↗
57. Berglund · IEEE Trans. Electron. Dev. · 1966 · ED-13 · 70110.1109/T-ED.1966.15827 ↗
58. Current–voltage and capacitance–voltage characteristics of a Sn/Methylene Blue/p-Si Schottky diode10.1016/j.synthmet.2009.04.024 ↗
59. Sharma · 2013
60. Space-charge-limited conduction in thin film Al/Sb2Pb1Se7/Al devices10.1590/S0103-97332000000200019 ↗
61. Photovoltaic characteristics of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) at various temperatures10.1016/j.cap.2013.03.010 ↗
62. Photoelectrical properties of solar sensitive CuO doped carbon photodiodes10.1016/j.molstruc.2020.127872 ↗
63. Optical, electrical and photoresponsive properties of Cu2NiSnS4 solar detectors10.1007/s11664-020-08197-5 ↗
64. Structural, photovoltaic and optoelectronic properties of graphene–amorphous carbon nanocomposite10.1007/s10854-021-06254-1 ↗
65. The SAM, not the electrodes, dominates charge transport in metal-monolayer//Ga2O3/gallium–indium eutectic junctions10.1021/nn205089u ↗
66. ZnSe nanowire/Si p-n heterojunctions: device construction and optoelectronic applications10.1088/0957-4484/24/39/395201 ↗
67. The photo-electrical properties of the p-Si/Fe(II)–polymeric complex/Au diode10.1016/j.synthmet.2013.10.002 ↗
68. Review Article: electrical and photoconductivity properties of p-Si/P3HT/Al and p-Si/P3HT:MEH-PPV/Al organic devices: comparison study10.1016/j.mee.2012.06.003 ↗
69. Fabrication, photoresponse and temperature dependence of n-VO2/n-MoSe2 heterojunction diode10.1016/j.spmi.2019.04.032 ↗
70. Synthesis and characterization of a main-chain polymer for single component photorefractive materials10.1016/S0379-6779(00)00184-3 ↗
71. Characterization of temperature dependent operation of a GaInNAs-based RCEPD designed for 1.3 μm10.1016/j.spmi.2016.12.022 ↗
72. Fabrication, photoresponse and temperature dependence of n-VO2/n-MoSe2 heterojunction diode10.1016/j.spmi.2019.04.032 ↗
73. Electrical and photoconductivity properties of p-Si/P3HT/Al and p-Si/P3HT: MEH-PPV/Al organic devices: comparison study10.1016/j.mee.2012.06.003 ↗
74. The photo-electrical properties of the p-Si/Fe (II)–polymeric complex/Au diode10.1016/j.synthmet.2013.10.002 ↗
75. Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors10.1143/JJAP.46.7217 ↗
76. Allison · 1990
77. Competition between recombination and extraction of free charges determines the fill factor of organic solar cells10.1038/ncomms8083 ↗
78. Effect of illumination on electrical parameters of Au/(P3DMTFT)/n-GaAs Schottky barrier diodes10.1007/s12648-019-01644-y ↗
79. Aluminum/polyaniline/GaAs metal-insulator-semiconductor solar cell: effect of tunneling on device performance10.1063/1.3149703 ↗
80. Structural, surface morphological, optical and electrical properties of InxSey thin films, an absorber layer for photovoltaic cells fabricated by M-CBD method using different variables
81. Effect of charge recombination on the fill factor of small molecule bulk heterojunction solar cells10.1002/aenm.201100040 ↗