Tailoring MBE growth of c-Mn3Sn directly on MgO (111) from islands to film
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Abstract
Abstract We present our study of (0001) oriented Mn3Sn (c-Mn3Sn) thin films synthesized directly on an MgO (111) substrate via molecular beam epitaxy. We identify a growth window where Mn3Sn growth can be controlled through slight adjustments of the Mn flux, achieving either μm²-sized high crystalline-quality islands or an almost completely continuous film. High-resolution X-ray diffraction results indicate that both films are highly (0001) oriented. The atomic resolution images show clear film-substrate interfaces displaying an epitaxial relationship. Scanning precession electron diffraction measurements reveal that the island featured sample has highly crystallized Mn3Sn. The sample featuring a high continuity exhibits defects in some areas but retains the dominant Mn3Sn structure. This work demonstrates a potential method for synthesizing high crystalline-quality Mn3Sn films with substantial coverage, facilitating the study of Mn3Sn films without the influence of an additional buffer layer and promoting their application in integrated spintronics.
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OpenAlex topics: ZnO doping and properties · Electronic and Structural Properties of Oxides · Semiconductor materials and devices
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References (37)
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