Solution-processed quantum-dot light-emitting diodes combining ultrahigh operational stability, shelf stability, and luminance
Source abstract
Abstract
Abstract The shelf-stability issue, originating from the ZnO-induced positive aging effect, poses a significant challenge to industrializing the display technology based on solution-processed quantum-dot light-emitting diodes (QLEDs). Currently, none of the proposed solutions can simultaneously inhibit exciton quenching caused by the ZnO-based electron-transporting layer (ETL) and retain other advantages of ZnO. Here in this work, we propose a bilayer design of ETL in which a buffer layer assembled of SnO2 nanoparticles (NPs) suppresses the QD-ETL exciton quenching and tunes charge balance while ZnO NPs provide high electron conductivity. As a result, the bottom-emitting QLED combining capped ZnO and SnO2 buffer exhibit a maximum luminance over 100,000 cd m−2 and a T95 operational lifetime averaging 6200 h at 1000 cd m−2 on the premise of entirely inhibiting positive aging.
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Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · ZnO doping and properties · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (34)
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