Copper-graphene heterostructure for back-end-of-line compatible high-performance interconnects
Source abstract
Abstract
Abstract Here, we demonstrate the fabrication of a Cu-graphene heterostructure interconnect by the direct synthesis of graphene on a Cu interconnect with an enhanced performance. Multilayer graphene films were synthesized on Cu interconnect patterns using a liquid benzene or pyridine source at 400 °C by atmospheric pressure chemical vapor deposition (APCVD). The graphene-capped Cu interconnects showed lower resistivity, higher breakdown current density, and improved reliability compared with those of pure Cu interconnects. In addition, an increase in the carrier density of graphene by doping drastically enhanced the reliability of the graphene-capped interconnect with a mean time to failure of >106 s at 100 °C under a continuous DC stress of 3 MA cm−2. Furthermore, the graphene-capped Cu heterostructure exhibited enhanced electrical properties and reliability even if it was a damascene-patterned structure, which indicates compatibility with practical applications such as next-generation interconnect materials in CMOS back-end-of-line (BEOL).
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · Semiconductor materials and devices · Low-power high-performance VLSI design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (32)
Show source-provided references
1. Baklanov, M. R., Adelmann, C., Zhao, L. & Gendta, S. D. Advanced interconnects: materials, processing, and reliability. ECS J. Solid State Sci. Technol. 4, Y1–Y4 (2015).10.1149/2.0271501jss ↗
2. Henriquez, L. et al. Size effects in thin gold films: discrimination between electron-surface an electron-grain boundary scattering by measuring the Hall effect at 4K. Appl. Phys. Lett. 102, 051608 (2015).10.1063/1.4791600 ↗
3. Khoo, K., Tashiro, S. & Onuki, J. Influence on the electro-migration resistance by line width and average grain size along the longitudinal direction of very narrow Cu wires. Mater. Trans. 51, 1183–1187 (2010).10.2320/matertrans.M2009339 ↗
4. Behnam, A. et al. Transport in nanoribbon interconnects obtained from graphene grown by chemical vapor deposition. Nano Lett. 12, 4424–4430 (2012).10.1021/nl300584r ↗
5. Kang, C. G. et al. Enhanced current drivability of CVD graphene interconnect in oxygen-deficient environment. IEEE Electron Dev. Lett. 32, 1591–1593 (2011).10.1109/LED.2011.2166240 ↗
6. Murali, R., Yang, Y., Brenner, K., Beck, T. & Meindl, J. D. Breakdown current density of graphene nanoribbons. Appl. Phys. Lett. 94, 243114 (2009).10.1063/1.3147183 ↗
7. Shao, Q., Liu, G., Teweldebrhan, D. & Balandin, A. A. High-temperature quenching of electrical resistance in graphene interconnects. Appl. Phys. Lett. 92, 202108 (2008).10.1063/1.2927371 ↗
8. Jiang, J. et al. Intercalation doped multilayer-graphene-nanoribbons for next-generation interconnects. Nano Lett. 17, 1482–1488 (2017).10.1021/acs.nanolett.6b04516 ↗
9. Jiang, J., Chu, J. H. & Banerjee, K. CMOS-compatible doped-multilayer graphene interconnects for next-generation VLSI. In IEEE Int. Electron Devices Meeting 34.5.1–34.5.4 (2018).10.1109/IEDM.2018.8614535 ↗
10. Yeh, C. H. et al. Scalable graphite/copper bishell composite for high-performance interconnects. ACS Nano 8, 275–282 (2014).10.1021/nn4059456 ↗
11. Mehta, R., Chugh, S. & Chen, Z. Enhanced electrical and thermal conduction in graphene-encapsulated copper nanowires. Nano Lett. 15, 2024–2030 (2015).10.1021/nl504889t ↗
12. Li, L. et al. BEOL compatible graphene/Cu with improved electromigration lifetime for future interconnects. In IEEE Int. Electron Devices Meeting 9.5.1–9.5.4 (2016).
13. Jang, J. et al. Low-temperature-grown continuous graphene films from benzene by chemical vapor deposition at ambient pressure. Sci. Rep. 5, 17955 (2015).10.1038/srep17955 ↗
14. Son, M. et al. High-quality nitrogen-doped graphene films synthesized from pyridine via two-step chemical vapor deposition. Carbon 159, 579–585 (2015).10.1016/j.carbon.2019.12.095 ↗
15. Dresselhaus, M. S., Jorio, A., Hofmann, M., Dresselhaus, G. & Saito, R. Perspectives on carbon nanotubes and graphene Raman spectroscopy. Nano Lett. 10, 751–758 (2010).10.1021/nl904286r ↗
16. Wood, J. D., Schmucker, S. W., Lyons, A. S., Pop, E. & Lyding, J. W. Effects of polycrystalline Cu substrate on graphene growth by chemical vapor deposition. Nano Lett. 11, 4547–4554 (2011).10.1021/nl201566c ↗
17. Li, J. et al. Controllable atmospheric pressure growth of mono-layer, bi-layer and tri-layer graphene. Chem. Commun. 50, 11012–11015 (2014).10.1039/C4CC04928D ↗
18. Li, X. et al. Large-area synthesis of high-quality and uniform graphene films on copper foils. Science 324, 1312–1314 (2009).10.1126/science.1171245 ↗
19. Han, G. H. et al. Influence of copper morphology in forming nucleation seeds for graphene growth. Nano Lett. 11, 4144–4148 (2011).10.1021/nl201980p ↗
20. Capasso, A. et al. Nitrogen-doped graphene films from chemical vapor deposition of pyridine: influence of process parameters on the electrical and optical properties. Beilstein J. Nanotechnol. 6, 2028–2038 (2015).10.3762/bjnano.6.206 ↗
21. Xue, Y. et al. Low temperature growth of highly nitrogen-doped single crystal graphene arrays by chemical vapor deposition. J. Am. Chem. Soc. 134, 11060–11063 (2012).10.1021/ja302483t ↗
22. Das, A. et al. Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor. Nat. Nanotechnol. 3, 210–215 (2008).10.1038/nnano.2008.67 ↗
23. Son, J. G. et al. Sub-10 nm graphene nanoribbon array field-effect transistors fabricated by block copolymer lithography. Adv. Mater. 25, 4723–4728 (2013).10.1002/adma.201300813 ↗
24. Kang, C. G. et al. Effects of multi-layer graphene capping on Cu interconnects. Nanotechnology 24, 115707 (2013).10.1088/0957-4484/24/11/115707 ↗
25. Jiang, J., Parto, K., Cao, W. & Banerjee, K. Ultimate monolithic-3D integration with 2D materials: rationale, prospects, and challenges. IEEE J. Electron Dev. Soc 7, 878–887 (2019).10.1109/JEDS.2019.2925150 ↗
26. Wei, F. L. et al. Electromigration-induced extrusion failures in Cu/low-k interconnects. J. Appl. Phys. 104, 023529 (2008).10.1063/1.2957057 ↗
27. Hu, C. K. et al. Reduced electromigration of Cu wires by surface coating. Appl. Phys. Lett. 81, 1782 (2002).10.1063/1.1504491 ↗
28. Cho, C. et al. Pulsed KrF laser-assisted direct deposition of graphitic capping layer for Cu interconnect. Carbon 123, 307–310 (2017).10.1016/j.carbon.2017.07.075 ↗
29. Vairagar, A. V. et al. Improvement of electromigration lifetime of submicrometer dual-damascene Cu interconnects through surface engineering. ECS. J. Electrochem. Soc. 153, G840–G845 (2006).10.1149/1.2217267 ↗
30. Lee, S. K., Hsu, H. C. & Tuan, W. H. Oxidation behavior of copper at a temperature below 300 °C and the methodology for passivation. Mater. Res. 19, 51–56 (2016).10.1590/1980-5373-MR-2015-0139 ↗
31. Lee, C., Wei, X., Kysar, J. W. & Hone, J. Measurement of the elastic properties and intrinsic strength of monolayer graphene. Science 321, 385–388 (2008).10.1126/science.1157996 ↗
32. Balandin, A. A. et al. Superior thermal conductivity of single-layer graphene. Nano Lett. 8, 902–907 (2008).10.1021/nl0731872 ↗