Giant memory window performance and low power consumption of hexagonal boron nitride monolayer atomristor
Source abstract
Abstract
Two-dimensional (2D) monolayers have gained significant attention as ultrathin active layers for fabricating atomic-scale memristor (atomristor) structures due to their crystalline structures and clean surfaces. This study reports on the giant memory window performance and low power consumption of the atomristor structures using a hexagonal boron nitride (h-BN) monolayer and symmetric silver (Ag) metal electrodes through a polypropylene carbonate (PPC) assisted transfer method. The h-BN atomristor exhibits the highest memory window (~4 × 10 9 ), the lowest leakage current (~0.24 pA), and the lowest power consumption (~3 × 10 −14 W) compared to the other 2D atomristors. Furthermore, the h-BN atomristor achieves significant endurances and yields of up to 10,000 switching cycles and 77%, respectively, due to the superior thermomechanical properties of the PPC support layer for transferring ultrathin and large-area h-BN monolayers. These results represent a significant step toward the realization of high-performance and energy-efficient neuromorphic computing circuits based on 2D monolayers.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Advanced Memory and Neural Computing · MXene and MAX Phase Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (72)
Show source-provided references
1. Novoselov, K. S. et al. Electric field effect in atomically thin carbon films. Science 306, 666–669 (2004).10.1126/science.1102896 ↗
2. Novoselov, K. S. et al. Two-dimensional gas of massless Dirac fermions in graphene. Nature 438, 197–200 (2005).10.1038/nature04233 ↗
3. Novoselov, K. S. et al. Two-dimensional atomic crystals. Proc. Natl. Acad. Sci. 102, 10451–10453 (2005).10.1073/pnas.0502848102 ↗
4. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147–150 (2011).10.1038/nnano.2010.279 ↗
5. Li, L. et al. Black phosphorus field-effect transistors. Nat. Nanotechnol. 9, 372–377 (2014).10.1038/nnano.2014.35 ↗
6. Molle, A. et al. Buckled two-dimensional Xene sheets. Nat. Mater. 16, 163–169 (2017).10.1038/nmat4802 ↗
7. Novoselov, K. S., Mishchenko, A., Carvalho, A. & Castro Neto, A. H. 2D materials and van der Waals heterostructures. Science 353, aac9439 (2016).10.1126/science.aac9439 ↗
8. Chhowalla, M., Jena, D. & Zhang, H. Two-dimensional semiconductors for transistors. Nat. Rev. Mater. 1, 1–15 (2016).10.1038/natrevmats.2016.52 ↗
9. Xia, F., Wang, H., Xiao, D., Dubey, M. & Ramasubramaniam, A. Two-dimensional material nanophotonics. Nat. Photon. 8, 899–907 (2014).10.1038/nphoton.2014.271 ↗
10. Akinwande, D., Petrone, N. & Hone, J. Two-dimensional flexible nanoelectronics. Nat. Commun. 5, 5678 (2014).10.1038/ncomms6678 ↗
11. Illarionov, Y. Y. et al. Insulators for 2D nanoelectronics: the gap to bridge. Nat. Commun. 11, 3385 (2020).10.1038/s41467-020-16640-8 ↗
12. Liu, Y. et al. Promises and prospects of two-dimensional transistors. Nature 591, 43–53 (2021).10.1038/s41586-021-03339-z ↗
13. Wang, S. et al. Two-dimensional devices and integration towards the silicon lines. Nat. Mater. 21, 1225–1239 (2022).10.1038/s41563-022-01383-2 ↗
14. Geim, A. K. & Novoselov, K. S. The rise of graphene. Nat. Mater. 6, 183–191 (2007).10.1038/nmat1849 ↗
15. Geim, A. K. Graphene: status and prospects. Science 324, 1530–1534 (2009).10.1126/science.1158877 ↗
16. Chhowalla, M. et al. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 5, 263–275 (2013).10.1038/nchem.1589 ↗
17. Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699–712 (2012).10.1038/nnano.2012.193 ↗
18. Mak, K. F. & Shan, J. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides. Nat. Photon. 10, 216–226 (2016).10.1038/nphoton.2015.282 ↗
19. Terrones, M. et al. Pure and doped boron nitride nanotubes. Mater. Today 10, 30–38 (2007).10.1016/S1369-7021(07)70077-9 ↗
20. Roy, S. et al. Structure, properties and applications of two-dimensional hexagonal boron nitride. Adv. Mater. 33, e2101589 (2021).10.1002/adma.202101589 ↗
21. Akinwande, D. et al. Graphene and two-dimensional materials for silicon technology. Nature 573, 507–518 (2019).10.1038/s41586-019-1573-9 ↗
22. Lemme, M. C., Akinwande, D., Huyghebaert, C. & Stampfer, C. 2D materials for future heterogeneous electronics. Nat. Commun. 13, 1392 (2022).10.1038/s41467-022-29001-4 ↗
23. Das, S. et al. Transistors based on two-dimensional materials for future integrated circuits. Nat. Electron. 4, 786–799 (2021).10.1038/s41928-021-00670-1 ↗
24. Shen, Y. et al. The trend of 2D transistors toward integrated circuits: scaling down and new mechanisms. Adv. Mater. 34, e2201916 (2022).10.1002/adma.202201916 ↗
25. Sangwan, V. K. & Hersam, M. C. Neuromorphic nanoelectronic materials. Nat. Nanotechnol. 15, 517–528 (2020).10.1038/s41565-020-0647-z ↗
26. Huh, W., Lee, D. & Lee, C.-H. Memristors based on 2D materials as an artificial synapse for neuromorphic electronics. Adv. Mater. 32, e2002092 (2020).10.1002/adma.202002092 ↗
27. Liu, C. et al. Two-dimensional materials for next-generation computing technologies. Nat. Nanotechnol. 15, 545–557 (2020).10.1038/s41565-020-0724-3 ↗
28. Mannix, A. J., Kiraly, B., Hersam, M. C. & Guisinger, N. P. Synthesis and chemistry of elemental 2D materials. Nat. Rev. Chem. 1, 1–14 (2017).10.1038/s41570-016-0014 ↗
29. Zhang, Y. et al. Recent progress in CVD growth of 2D transition metal dichalcogenides and related heterostructures. Adv. Mater. 31, e1901694 (2019).10.1002/adma.201901694 ↗
30. Dong, J., Zhang, L. & Ding, F. Kinetics of graphene and 2D materials growth. Adv. Mater. 31, e1801583 (2019).10.1002/adma.201801583 ↗
31. Liu, C., Wang, L., Qi, J. & Liu, K. Designed growth of large-size 2D single crystals. Adv. Mater. 32, e2000046 (2020).10.1002/adma.202000046 ↗
32. Xu, X. et al. Growth of 2D materials at the wafer scale. Adv. Mater. 34, e2108258 (2022).10.1002/adma.202108258 ↗
33. Lee, Y.-H. et al. Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces. Nano Lett. 13, 1852–1857 (2013).10.1021/nl400687n ↗
34. Watson, A. J., Lu, W., Guimaraes, M. H. D. & Stöhr, M. Transfer of large-scale two-dimensional semiconductors: challenges and developments. 2D Mater 8, 032001 (2021).10.1088/2053-1583/abf234 ↗
35. Ullah, S. et al. Graphene transfer methods: A review. Nano Res 14, 3756–3772 (2021).10.1007/s12274-021-3345-8 ↗
36. Schranghamer, T. F., Sharma, M., Singh, R. & Das, S. Review and comparison of layer transfer methods for two-dimensional materials for emerging applications. Chem. Soc. Rev. 50, 11032–11054 (2021).10.1039/D1CS00706H ↗
37. Kim, J.-Y., Ju, X., Ang, K.-W. & Chi, D. Van der Waals layer transfer of 2D materials for monolithic 3D electronic system integration: Review and outlook. ACS Nano 17, 1831–1844 (2023).10.1021/acsnano.2c10737 ↗
38. Lin, J. et al. Smoothening of wrinkles in CVD-grown hexagonal boron nitride films. Nanoscale 10, 16243–16251 (2018).10.1039/C8NR03984D ↗
39. Leong, W. S. et al. Paraffin-enabled graphene transfer. Nat. Commun. 10, 867 (2019).10.1038/s41467-019-08813-x ↗
40. Zhang, T. et al. Clean transfer of 2D transition metal dichalcogenides using cellulose acetate for atomic resolution characterizations. ACS Appl. Nano Mater. 2, 5320–5328 (2019).10.1021/acsanm.9b01257 ↗
41. Wang, P. et al. High-fidelity transfer of chemical vapor deposition grown 2D transition metal dichalcogenides via substrate decoupling and polymer/small molecule composite. ACS Nano 14, 7370–7379 (2020).10.1021/acsnano.0c02838 ↗
42. Zhuang, B., Li, S., Li, S. & Yin, J. Ways to eliminate PMMA residues on graphene - superclean graphene. Carbon 173, 609–636 (2021).10.1016/j.carbon.2020.11.047 ↗
43. Mohan, S. et al. Direct metal-free growth and dry separation of bilayer graphene on sapphire: Implications for electronic applications. ACS Appl. Nano Mater. 6, 19018–19028 (2023).10.1021/acsanm.3c03533 ↗
44. Lanza, M. et al. Recommended methods to study resistive switching devices. Adv. Electron. Mater. 5, 1800143 (2019).10.1002/aelm.201800143 ↗
45. Shen, Y. et al. Variability and yield in h-BN-based memristive circuits: The role of each type of defect. Adv. Mater. 33, 434–441 (2021).10.1002/adma.202103656 ↗
46. Ge, R. et al. Atomristor: Nonvolatile resistance switching in atomic sheets of transition metal dichalcogenides. Nano Lett. 18, 434–441 (2018).10.1021/acs.nanolett.7b04342 ↗
47. Ge, R. et al. Atomristors: Memory effect in atomically-thin sheets and record RF switches. in 2018 IEEE International Electron Devices Meeting (IEDM) 22.6.1–22.6.4, (IEEE, 2018).10.1109/IEDM.2018.8614602 ↗
48. Wu, X. et al. Thinnest nonvolatile memory based on monolayer h-BN. Adv. Mater. 31, e1806790 (2019).10.1002/adma.201806790 ↗
49. Kim, M. et al. Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems. Nat. Electron. 3, 479–485 (2020).10.1038/s41928-020-0416-x ↗
50. Kim, M. et al. Monolayer molybdenum disulfide switches for 6G communication systems. Nat. Electron. 5, 367–373 (2022).10.1038/s41928-022-00766-2 ↗
51. Yang, S. J. et al. Reconfigurable low-voltage hexagonal boron nitride nonvolatile switches for millimeter-wave wireless communications. Nano Lett. 23, 1152–1158 (2023).10.1021/acs.nanolett.2c03565 ↗
52. Kim, D. et al. Emerging memory electronics for non-volatile radiofrequency switching technologies. Nat. Rev. Electr. Eng. 1, 10–23 (2024).10.1038/s44287-023-00001-w ↗
53. Hus, S. M. et al. Observation of single-defect memristor in an MoS2 atomic sheet. Nat. Nanotechnol. 16, 58–62 (2021).10.1038/s41565-020-00789-w ↗
54. Ge, R. et al. A library of atomically thin 2D materials featuring the conductive-point resistive switching phenomenon. Adv. Mater. 33, e2007792 (2021).10.1002/adma.202007792 ↗
55. Yang, S. J. et al. Volatile and nonvolatile resistive switching coexistence in conductive point hexagonal boron nitride monolayer. ACS Nano 18, 3313–3322 (2024).10.1021/acsnano.3c10068 ↗
56. Wu, X. et al. Electron irradiation-induced defects for reliability improvement in monolayer MoS2-based conductive-point memory devices. npj 2D Mater. Appl. 6, 1–12 (2022).10.1038/s41699-022-00306-8 ↗
57. Huang, Y. et al. Reliability improvement and effective switching layer model of thin‐film MoS2 memristors. Adv. Funct. Mater. 34, e2214250 (2023).10.1002/adfm.202214250 ↗
58. Mondal, A. et al. Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer. Nat. Nanotechnol. 19, 34–43 (2023).10.1038/s41565-023-01497-x ↗
59. Li, X. et al. Research and application of polypropylene carbonate composite materials: A review. Polymers 14, 2159 (2022).10.3390/polym14112159 ↗
60. Jiang, G., Feng, J., Zhang, M., Zhang, S. & Huang, H. Structure, and thermal and mechanical properties of poly(propylene carbonate) capped with different types of acid anhydride via reactive extrusion. RSC Adv 6, 107547–107555 (2016).10.1039/C6RA18713G ↗
61. Pizzocchero, F. et al. The hot pick-up technique for batch assembly of van der Waals heterostructures. Nat. Commun. 7, 11894 (2016).10.1038/ncomms11894 ↗
62. Kinoshita, K. et al. Dry release transfer of graphene and few-layer h-BN by utilizing thermoplasticity of polypropylene carbonate. npj 2D Mater. Appl. 3, 1–8 (2019).10.1038/s41699-019-0104-8 ↗
63. Gorbachev, R. V. et al. Hunting for monolayer boron nitride: Optical and Raman signatures. Small 7, 465–468 (2011).10.1002/smll.201001628 ↗
64. Falin, A. et al. Mechanical properties of atomically thin boron nitride and the role of interlayer interactions. Nat. Commun. 8, 15815 (2017).10.1038/ncomms15815 ↗
65. Cai, Q. et al. High thermal conductivity of high-quality monolayer boron nitride and its thermal expansion. Sci. Adv. 5, eaav0129 (2019).10.1126/sciadv.aav0129 ↗
66. Shi, Y. et al. Electronic synapses made of layered two-dimensional materials. Nat. Electron. 1, 458–465 (2018).10.1038/s41928-018-0118-9 ↗
67. Chen, S. et al. Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks. Nat. Electron. 3, 638–645 (2020).10.1038/s41928-020-00473-w ↗
68. Jeon, Y.-R. et al. Study of in situ silver migration in amorphous boron nitride CBRAM device. ACS Appl. Mater. Interfaces 11, 23329–23336 (2019).10.1021/acsami.9b05384 ↗
69. Shukla, N., Ghosh, R. K., Grisafe, B. & Datta, S. Fundamental mechanism behind volatile and non-volatile switching in metallic conducting bridge RAM. in 2017 IEEE International Electron Devices Meeting (IEDM) 4.3.1–4.3.4 (IEEE, 2017).10.1109/IEDM.2017.8268325 ↗
70. Li, Y. et al. Resistive switching properties of monolayer h-BN atomristors with different electrodes. Appl. Phys. Lett 120, 173104 (2022).10.1063/5.0087717 ↗
71. Ge, J. et al. A sub-500 mV monolayer hexagonal boron nitride based memory device. Mater. Des. 198, 109366 (2021).10.1016/j.matdes.2020.109366 ↗
72. Huang, Y. et al. ReSe2-Bbased RRAM and circuit-level model for neuromorphic computing. Front. Nanotechnol 3, 782836 (2021).10.3389/fnano.2021.782836 ↗