Topologically protected spin diffusion and spin generator using chalcogenide superlattices
Source abstract
Abstract
Abstract Spintronics is expected to be the basis for future ultra-low-energy nanoelectronic devices. To operate such devices at room temperature, amplifiers, batteries, capacitors, as well as spin current sources are required. Here we report a chalcogenide superlattice composed of GeTe and Sb2Te3 layers that have a topologically protected spin diffusion length exceeding 100 μm at room temperature. A spin generator is demonstrated by combining magnetic injectors (TbFeCo) with this superlattice. The spin current was found to increase exponentially with the number of superlattice periods. We used this effect to demonstrate a 15-fold increase in the spin current. In addition, spin rectification is possible by growing the superlattice layers with atomic-level thickness accuracy. The reported chalcogenide superlattice spin generators and rectifiers open new opportunities to design low-energy spintronic integrated circuits and quantum computers.
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Research context
OpenAlex topics: Topological Materials and Phenomena · Phase-change materials and chalcogenides · 2D Materials and Applications
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References (42)
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