journal article·2020-06-12Open access

Sub-picosecond photo-induced displacive phase transition in two-dimensional MoTe2

Bo Peng, Hao Zhang, Weiwen Chen, Bowen Hou, Zhi-Jun Qiu, Hezhu Shao, Heyuan Zhu, Bartomeu Monserrat, Desheng Fu, Hongming Weng, Costas M. Soukoulis

Abstract

Abstract Photo-induced phase transitions (PIPTs) provide an ultrafast, energy-efficient way for precisely manipulating the topological properties of transition-metal ditellurides and can be used to stabilize a topological phase in an otherwise semiconducting material. Using first-principles calculations, we demonstrate that the PIPT in monolayer MoTe2 from the semiconducting 2H phase to the topological 1T′ phase can be triggered purely by electronic excitations that soften multiple lattice vibrational modes. These softenings, driven by a Peierls-like mechanism within the conduction bands, lead to structural symmetry breaking within sub-picosecond timescales, which is shorter than the timescale of a thermally driven phase transition. The transition is predicted to be triggered by photons with energies over 1.96 eV, with an associated excited carrier density of 3.4 × 1014 cm−2, which enables a controllable phase transformation by varying the laser wavelength. Our results provide insight into the underlying physics of the phase transition in 2D transition-metal ditellurides and show an ultrafast phase-transition mechanism for manipulation of the topological properties of 2D systems.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Topological Materials and Phenomena · 2D Materials and Applications · Thermal properties of materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (56)

Show source-provided references
1. Nasu, K. (ed) Photo-Induced Phase Transitions (World Scientific, 2004).10.1142/5476 ↗
2. Bisoyi, H. K. & Li, Q. Light-driven liquid crystalline materials: from photo-induced phase transitions and property modulations to applications. Chem. Rev. 116, 15089–15166 (2016).10.1021/acs.chemrev.6b00415 ↗
3. Wu, J. M. & Liou, L. B. Room temperature photo-induced phase transitions of vo2 nanodevices. J. Mater. Chem. 21, 5499–5504 (2011).10.1039/c0jm03203d ↗
4. Koshihara, S., Tokura, Y., Mitani, T., Saito, G. & Koda, T. Photoinduced valence instability in the organic molecular compound tetrathiafulvalene-p-chloranil (ttf-ca). Phys. Rev. B 42, 6853–6856 (1990).10.1103/PhysRevB.42.6853 ↗
5. Hanamura, E. In Relaxations of Excited States and Photo-Induced Structural Phase Transitions 34–44 (Springer-Verlag, Berlin, Heidelberg, 1997).10.1007/978-3-642-60702-8_4 ↗
6. Wang, Y. et al. Structural phase transition in monolayer mote2 driven by electrostatic doping. Nature 550, 487 (2017).10.1038/nature24043 ↗
7. Fei, Z. et al. Ferroelectric switching of a two-dimensional metal. Nature 560, 336–339 (2018).10.1038/s41586-018-0336-3 ↗
8. Zhang, F. et al. Electric-field induced structural transition in vertical mote2- and mo1-xwxte2-based resistive memories. Nat. Mater. 18, 55–61 (2019a).10.1038/s41563-018-0234-y ↗
9. Cho, S. et al. Phase patterning for ohmic homojunction contact in mote2. Science 349, 625 (2015).10.1126/science.aab3175 ↗
10. Sie, E. J. et al. An ultrafast symmetry switch in a weyl semimetal. Nature 565, 61–66 (2019).10.1038/s41586-018-0809-4 ↗
11. Yang, H., Kim, S. W., Chhowalla, M. & Lee, Y. H. Structural and quantum-state phase transitions in van der waals layered materials. Nat. Phys. 13, 931 (2017).10.1038/nphys4188 ↗
12. Kolobov, A. V., Fons, P. & Tominaga, J. Electronic excitation-induced semiconductor-to-metal transition in monolayer mote2. Phys. Rev. B 94, 094114 (2016).10.1103/PhysRevB.94.094114 ↗
13. Krishnamoorthy, A. et al. Semiconductor-metal structural phase transformation in mote2 monolayers by electronic excitation. Nanoscale 10, 2742–2747 (2018).10.1039/C7NR07890K ↗
14. Tan, Y. et al. Controllable 2h-to-1t’ phase transition in few-layer mote2. Nanoscale 10, 19964–19971 (2018).10.1039/C8NR06115G ↗
15. Qian, X., Liu, J., Fu, L. & Li, J. Quantum spin hall effect in two-dimensional transition metal dichalcogenides. Science 346, 1344 (2014).10.1126/science.1256815 ↗
16. Choe, D. H., Sung, H. J. & Chang, K. J. Understanding topological phase transition in monolayer transition metal dichalcogenides. Phys. Rev. B 93, 125109 (2016).10.1103/PhysRevB.93.125109 ↗
17. Sajadi, E. et al. Gate-induced superconductivity in a monolayer topological insulator. Science 362, 922 (2018).10.1126/science.aar4426 ↗
18. Fatemi, V. et al. Electrically tunable low-density superconductivity in a monolayer topological insulator. Science 362, 926 (2018).10.1126/science.aar4642 ↗
19. Kretschmer, S., Komsa, H. P., Boggild, P. & Krasheninnikov, A. V. Structural transformations in two-dimensional transition-metal dichalcogenide mos2 under an electron beam: Insights from first-principles calculations. J. Phys. Chem. Lett. 8, 3061–3067 (2017).10.1021/acs.jpclett.7b01177 ↗
20. Wang, Z., Li, X., Zhang, G., Luo, Y. & Jiang, J. Suppressing electron-phonon coupling through laser-induced phase transition. ACS Appl. Mater. Interfaces 9, 23309–23313 (2017).10.1021/acsami.7b05480 ↗
21. Yoshimura, A., Lamparski, M., Kharche, N. & Meunier, V. First-principles simulation of local response in transition metal dichalcogenides under electron irradiation. Nanoscale 10, 2388–2397 (2018).10.1039/C7NR07024A ↗
22. Duerloo, K. A. N., Li, Y. & Reed, E. J. Structural phase transitions in two-dimensional mo- and w-dichalcogenide monolayers. Nat. Commun. 5, 4214 (2014).10.1038/ncomms5214 ↗
23. Song, S. et al. Room temperature semiconductor-metal transition of mote2 thin films engineered by strain. Nano Lett. 16, 188–193 (2016).10.1021/acs.nanolett.5b03481 ↗
24. Zhang, M. Y. et al. Light-induced subpicosecond lattice symmetry switch in mote2. Phys. Rev. X 9, 021036 (2019b).
25. Kim, H. J., Kang, S. H., Hamada, I. & Son, Y. W. Origins of the structural phase transitions in mote2 and wte2. Phys. Rev. B 95, 180101 (2017).10.1103/PhysRevB.95.180101 ↗
26. Yamamoto, M. et al. Strong enhancement of raman scattering from a bulk-inactive vibrational mode in few-layer mote2. ACS Nano 8, 3895–3903 (2014).10.1021/nn5007607 ↗
27. Kan, M., Nam, H. G., Lee, Y. H. & Sun, Q. Phase stability and raman vibration of the molybdenum ditelluride (mote2) monolayer. Phys. Chem. Chem. Phys. 17, 14866–14871 (2015).10.1039/C5CP01649E ↗
28. Guo, H. et al. Double resonance raman modes in monolayer and few-layer mote2. Phys. Rev. B 91, 205415 (2015).10.1103/PhysRevB.91.205415 ↗
29. Dove, M.T. Introduction to Lattice Dynamics (Cambridge Univ. Press, 1993).10.1017/CBO9780511619885 ↗
30. Dove, M. T. Review: theory of displacive phase transitions in minerals. Am. Mineral. 82, 213 (1997).10.2138/am-1997-3-401 ↗
31. Kittel, C. Introduction to Solid State Physics (Wiley, New York, 1976).
32. Zeks, B. & Blinc, R. Soft Modes in Ferroelectrics and Antiferroelectrics (North-Holland, 1974).
33. Monserrat, B. Electron-phonon coupling from finite differences. J. Phys. Condens. Matter 30, 083001 (2018).10.1088/1361-648X/aaa737 ↗
34. Song, Y. et al. Second harmonic generation in atomically thin mote2. Adv. Opt. Mater. 6, 1701334 (2018).10.1002/adom.201701334 ↗
35. Wall, S. et al. Ultrafast changes in lattice symmetry probed by coherent phonons. Nat. Commun. 3, 721 (2012).10.1038/ncomms1719 ↗
36. Bernardi, M., Vigil-Fowler, D., Lischner, J., Neaton, J. B. & Louie, S. G. Ab initio study of hot carriers in the first picosecond after sunlight absorption in silicon. Phys. Rev. Lett. 112, 257402 (2014).10.1103/PhysRevLett.112.257402 ↗
37. Shah, J. Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures (Springer Science & Business Media, 2013).
38. Kotani, T. & van Schilfgaarde, M. Impact ionization rates for si, gaas, inas, zns, and gan in the gw approximation. Phys. Rev. B 81, 125201 (2010).10.1103/PhysRevB.81.125201 ↗
39. Peng, B. et al. Room-temperature bound exciton with long lifetime in monolayer gan. ACS Photonics 5, 4081–4088 (2018a).10.1021/acsphotonics.8b00757 ↗
40. van Setten, M. J., Uijttewaal, M. A., de Wijs, G. A. & de Groot, R. A. Thermodynamic stability of boron: the role of defects and zero point motion. J. Am. Chem. Soc. 129, 2458–2465 (2007).10.1021/ja0631246 ↗
41. Peng, B. et al. Stability and strength of atomically thin borophene from first principles calculations. Mater. Res. Lett. 5, 399–407 (2017).10.1080/21663831.2017.1298539 ↗
42. Peng, B. et al. Tuning thermal transport in c3N monolayers by adding and removing carbon atoms. Phys. Rev. Appl. 10, 034046 (2018b).10.1103/PhysRevApplied.10.034046 ↗
43. Keum, D. H. et al. Bandgap opening in few-layered monoclinic mote2. Nat. Phys. 11, 482 (2015).10.1038/nphys3314 ↗
44. Si, C. et al. Photoinduced vacancy ordering and phase transition in mote2. Nano Lett. 19, 3612–3617 (2019).10.1021/acs.nanolett.9b00613 ↗
45. Zhang, W. et al. Role of vacancies in metal-insulator transitions of crystalline phase-change materials. Nat. Mater. 11, 952–956 (2012).10.1038/nmat3456 ↗
46. Lv, Y. Y. et al. Composition and temperature-dependent phase transition in miscible mo1-xwxte2 single crystals. Sci. Rep. 7, 44587 (2017).10.1038/srep44587 ↗
47. Paillard, C., Torun, E., Wirtz, L., Íñiguez, J. & Bellaiche, L. Photoinduced phase transitions in ferroelectrics. Phys. Rev. Lett. 123, 087601 (2019).10.1103/PhysRevLett.123.087601 ↗
48. Kresse, G. & Furthmüller, J. J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54, 11169–11186 (1996).10.1103/PhysRevB.54.11169 ↗
49. Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865–3868 (1996).10.1103/PhysRevLett.77.3865 ↗
50. Jones, R. O. & Gunnarsson, O. The density functional formalism, its applications and prospects. Rev. Mod. Phys. 61, 689–746 (1989).10.1103/RevModPhys.61.689 ↗
51. Görling, A. Density-functional theory for excited states. Phys. Rev. A 54, 3912–3915 (1996).10.1103/PhysRevA.54.3912 ↗
52. Hellman, A., Razaznejad, B. & Lundqvist, B. I. Potential-energy surfaces for excited states in extended systems. J. Chem. Phys. 120, 4593–4602 (2004).10.1063/1.1645787 ↗
53. Mauri, F. & Car, R. First-principles study of excitonic self-trapping in diamond. Phys. Rev. Lett. 75, 3166–3169 (1995).10.1103/PhysRevLett.75.3166 ↗
54. Ismail-Beigi, S. & Louie, S. G. Excited-state forces within a first-principles green’s function formalism. Phys. Rev. Lett. 90, 076401 (2003).10.1103/PhysRevLett.90.076401 ↗
55. Li, X. B. et al. Role of electronic excitation in the amorphization of ge-sb-te alloys. Phys. Rev. Lett. 107, 015501 (2011).10.1103/PhysRevLett.107.015501 ↗
56. Chen, N. K. et al. Giant lattice expansion by quantum stress and universal atomic forces in semiconductors under instant ultrafast laser excitation. Phys. Chem. Chem. Phys. 19, 24735–24741 (2017).10.1039/C7CP03103C ↗