Far-UV photoluminescence microscope for impurity domain in hexagonal-boron-nitride single crystals by high-pressure, high-temperature synthesis
Source abstract
Abstract
Abstract Hexagonal-boron-nitride single crystals grown by high-pressure, high-temperature (HPHT) synthesis are commonly used as the insulated substrate dielectric for two-dimensional (2D) atomic-layered materials like graphene and transition metal dichalcogenides (TMDs) to improve the flatness of the 2D materials atomically without disturbing the 2D electronic characteristics. However, HPHT single crystals often contain impure regions, which can hold subtle clues in regard to the 2D atomic-layered materials for new discoveries in the physics of 2D materials. To identify the position of the impure domains and to avoid them when the 2D devices are prepared, a far-ultraviolet photoluminescence microscope was developed. This microscope makes it possible to visualize the impure-growth region with ease in a no-contact and non-destructive manner.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Graphene research and applications · MXene and MAX Phase Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (22)
Show source-provided references
1. Novoselov, K. S. et al. Electric field effect in atomically thin carbon films. Science 306, 666–669 (2004).10.1126/science.1102896 ↗
2. Geim, A. K. & Grigorieva, I. V. Van der Waals heterostructures. Nature 499, 419–425 (2013).10.1038/nature12385 ↗
3. Dean, C. R. et al. Boron nitride substrates for high-quality graphene electronics. Nat. Nanotechnol. 5, 722–726 (2010).10.1038/nnano.2010.172 ↗
4. Mishima, O. & Era, K. In Electric Refractory Materials (ed. Kumashiro, Y.) 495–556 (Marcel Dekker, Inc., New York, Basel, 2000).
5. Taniguchi, T. & Watanabe, K. Synthesis of high-purity boron nitride single crystals under high pressure by using Ba-BN Solvent. J. Cryst. Growth 303, 525–529 (2007).10.1016/j.jcrysgro.2006.12.061 ↗
6. Wang, L. et al. One-dimensional electrical contact to a two-dimensional material. Science 342, 614–617 (2013).10.1126/science.1244358 ↗
7. Yankowitz, M., Ma, Q., Jarillo-Herrero, P. & LeRoy, B. J. van der Waals heterostructures combining graphene and hexagonal boron nitride. Nat. Rev. Phys. 1, 112–125 (2019).10.1038/s42254-018-0016-0 ↗
8. Era, K., Minami, F. & Kuzuba, T. Fast luminescence from carbon-related defects of hexagonal boron nitride. J. Lumin. 24-25, 71–74 (1981).10.1016/0022-2313(81)90223-4 ↗
9. Museur, L., Feldbach, E. & Kanaev, A. Defect-related photoluminescence of hexagonal boron nitride. Phys. Rev. B 78, 155204 (2008).10.1103/PhysRevB.78.155204 ↗
10. Du, X. Z., Li, J., Lin, J. Y. & Jiang, H. X. The origin of deep-level impurity transitions in hexagonal boron nitride. Appl. Phys. Lett. 106, 021110 (2015).10.1063/1.4905908 ↗
11. Weston, L., Wickramaratne, D., Mackoit, M., Alkauskas, A. & Van de Walle, C. G. Native point defects and impurities in hexagonal boron nitride. Phys. Rev. B 97, 214104 (2018).10.1103/PhysRevB.97.214104 ↗
12. Grenadier, S. J., Maity, A., Li, J., Lin, J. Y. & Jiang, H. X. Origin and roles of oxygen impurities in hexagonal boron nitride epilayers. Appl. Phys. Lett. 112, 162103 (2018).10.1063/1.5026291 ↗
13. Vokhmintsev, A., Weinstein, I. & Zamyatin, D. Electron–phonon interactions in subband excited photoluminescence of hexagonal boron nitride. J. Lumin. 208, 363–370 (2019).10.1016/j.jlumin.2018.12.036 ↗
14. Watanabe, K. & Taniguchi, T. Hexagonal boron nitride as a new ultraviolet luminescent material and its application. Int. J. Appl. Ceram. Technol. 8, 977–989 (2011).10.1111/j.1744-7402.2011.02626.x ↗
15. Wong, D. et al. Characterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunnelling microscopy. Nat. Nanotechol. 10, 949–953 (2015).10.1038/nnano.2015.188 ↗
16. Wanzenboeck, H. D., Roediger, P., Hochleitner, G., Bertagnolli, E. & Buehler, W. Novel method for cleaning a vacuum chamber from hydrocarbon contamination. J. Vac. Sci. Technol. A 28, 1413–1420 (2010).10.1116/1.3484242 ↗
17. Cassabois, G., Valvin, P. & Gil, B. Hexagonal boron nitride is an indirect bandgap semiconductor. Nat. Photonics 10, 262–266 (2016).10.1038/nphoton.2015.277 ↗
18. Schué, L. et al. Bright luminescence from indirect and strongly bound excitons in h-BN. Phys. Rev. Lett. 122, 067401 (2019).10.1103/PhysRevLett.122.067401 ↗
19. Hua, Li, L. et al. Photoluminescence of boron nitride nanosheets exfoliated by ball milling. Appl. Phys. Lett. 100, 261108 (2012).10.1063/1.4731203 ↗
20. Watanabe, K. & Taniguchi, T. Jahn–Teller effect on exciton states in hexagonal boron nitride single crystal. Phys. Rev. B 79, 193104 (2009).10.1103/PhysRevB.79.193104 ↗
21. Riedl, M. J. Optical Design Fundamentals for Infrared Systems 2nd edn (SPIE Press, Bellingham, WA, 2001).10.1117/3.412729 ↗
22. Masubuchi, S. et al. Autonomous robotic searching and assembly of two-dimensional crystals to build van der Waals superlattices. Nat. Commun. 9, 1413 (2018).10.1038/s41467-018-03723-w ↗