journal article·2025-07-01Open access

Printing ultrathin Quasi-2D Ga2O3 for fast yet highly responsive vertical photodetectors

Qian Li, Ruofan Li, Xueqing Chen, Minghui Guo, Jing Liu, Xianwei Meng

Abstract

UV detectors have the advantages of simple signal processing, low false alarm rate, and strong anti-interference capability, and are widely used in both defense and civil applications. Gallium oxide (Ga 2 O 3 ) holds great promise for photodetection, but its slow response rate hinders practical applications, so fast-response alternatives are urgently needed. Here we demonstrated ultrathin quasi-two-dimensional (2D) Ga 2 O 3 vertical UV photodetectors with short channel lengths constructed via liquid metal printing strategy for the first time. The device achieves ultrafast response time (≈1.18 μs), high detectivity (≈2.8 × 10 13 Jones), large switching ratio (~10 7 ), and low dark current (≈10 pA), which is comparable to commercial materials, demonstrating its considerable capability for photodetection technology field. This high-performance and low-cost photodetector based on liquid metal printing process provides a successful start for a wide range of applications of Ga 2 O 3 in UV detection. It demonstrates the great potential of novel quasi-2D Ga 2 O 3 devices for next-generation photodetection technologies.
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Research context

OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Perovskite Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (64)

Show source-provided references
1. Adinolfi, V. & Sargent, E. H. Photovoltage field-effect transistors. Nature 542, 324–327 (2017).10.1038/nature21050 ↗
2. Assefa, S., Xia, F. & Vlasov, Y. A. Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects. Nature 464, 80–84 (2010).10.1038/nature08813 ↗
3. Bao, C. et al. High performance and stable all-inorganic metal halide perovskite-based photodetectors for optical communication applications. Adv. Mater. 30, 1803422 (2018).10.1002/adma.201803422 ↗
4. Liu, Y. et al. A 1300 mm2 ultrahigh-performance digital imaging assembly using high-quality perovskite single crystals. Adv. Mater. 30, 1707314 (2018).10.1002/adma.201707314 ↗
5. Xu, Y. et al. Squeeze-printing ultrathin 2D gallium oxide out of liquid metal for forming-free neuromorphic memristors. ACS Appl. Mater. Interfaces 15, 25831–25837 (2023).10.1021/acsami.3c02998 ↗
6. Yoon, Y., Kim, Y., Hwang, W. S. & Shin, M. Biological UV photoreceptors-inspired Sn-doped polycrystalline β-Ga2O3 optoelectronic synaptic phototransistor for neuromorphic computing. Adv. Electron. Mater. 9, 2300098 (2023).10.1002/aelm.202300098 ↗
7. Zhang, Z. et al. In-sensor reservoir computing system for latent fingerprint recognition with deep ultraviolet photo-synapses and memristor array. Nat. Commun. 13, 6590 (2022).10.1038/s41467-022-34230-8 ↗
8. Li, R. et al. Multi-modulated optoelectronic memristor based on Ga2O3/MoS2 heterojunction for bionic synapses and artificial visual system. Nano Energy 111, 108398 (2023).10.1016/j.nanoen.2023.108398 ↗
9. Long, M., Wang, P., Fang, H. & Hu, W. Progress, challenges, and opportunities for 2D material based photodetectors. Adv. Funct. Mater. 29, 1803807 (2019).10.1002/adfm.201803807 ↗
10. Cai, S., Xu, X., Yang, W., Chen, J. & Fang, X. Materials and designs for wearable photodetectors. Adv. Mater. 31, 1808138 (2019).10.1002/adma.201808138 ↗
11. Wang, P. et al. Sensing infrared photons at room temperature: from bulk materials to atomic layers. Small 15, 1904396 (2019).10.1002/smll.201904396 ↗
12. Pan, Q. et al. Omnidirectional photodetectors based on spatial resonance asymmetric facade via a 3D self-standing strategy. Adv. Mater. 32, 1907280 (2020).10.1002/adma.201907280 ↗
13. Guo, J. et al. Type-printable photodetector arrays for multichannel meta-infrared imaging. Nat. Commun. 15, 5193 (2024).10.1038/s41467-024-49592-4 ↗
14. Liu, Y., Huang, Y. & Duan, X. Van der Waals integration before and beyond two-dimensional materials. Nature 567, 323–333 (2019).10.1038/s41586-019-1013-x ↗
15. Jung, Y. et al. Transferred via contacts as a platform for ideal two-dimensional transistors. Nat. Electron. 2, 187–194 (2019).10.1038/s41928-019-0245-y ↗
16. Wang, Y. et al. Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors. Nature 568, 70–74 (2019).10.1038/s41586-019-1052-3 ↗
17. Liu, Y. et al. Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions. Nature 557, 696–700 (2018).10.1038/s41586-018-0129-8 ↗
18. Rhoderick, E. & Williams, R. Metal-Semiconductor Contacts, 2nd edn (Clarendon Press, 1988).
19. Lince, J. R., Carré, D. J. & Fleischauer, P. D. Schottky-barrier formation on a covalent semiconductor without Fermi-level pinning: the metal-MoS2(0001) interface. Phys. Rev. B 36, 1647 (1987).10.1103/PhysRevB.36.1647 ↗
20. He, H. et al. First-principles study of the structural, electronic, and optical properties of Ga2O3 in its monoclinic and hexagonal phases. Phys. Rev. B 74, 195123 (2006).10.1103/PhysRevB.74.195123 ↗
21. Passlack, M. et al. Ga2O3 films for electronic and optoelectronic applications. J. Appl. Phys. 77, 686–693 (1995).10.1063/1.359055 ↗
22. Ding, W. & Meng, X. High performance solar-blind UV detector based on β-Ga2O3/GaN nanowires heterojunction. J. Alloy. Compd. 866, 157564 (2021).10.1016/j.jallcom.2020.157564 ↗
23. Chen, W. et al. A fast self-powered solar-blind ultraviolet photodetector realized by Ga2O3/GaN PIN heterojunction with a fully depleted active region. Adv. Optical Mater. 11, 2202847 (2023).10.1002/adom.202202847 ↗
24. Zhang, M. et al. High-temperature reliability of all-oxide self-powered deep UV photodetector based on epsilon-Ga2O3/ZnO heterojunction. J. Phys. D Appl. Phys. 55, 375106 (2022).10.1088/1361-6463/ac7d1c ↗
25. Zhang, W. et al. Role of metal contacts in high-performance phototransistors based on WSe2 monolayers. ACS Nano 8, 8653–8661 (2014).10.1021/nn503521c ↗
26. Konstantatos, G. et al. Hybrid graphene–quantum dot phototransistors with ultrahigh gain. Nat. Nanotechnol. 7, 363–368 (2012).10.1038/nnano.2012.60 ↗
27. Qiao, S. et al. A vertically layered MoS2/Si heterojunction for an ultrahigh and ultrafast photoresponse photodetector. J. Mater. Chem. C 6, 3233–3239 (2018).10.1039/C7TC05896A ↗
28. Wang, Y. et al. Ultrasensitive flexible solar-blind photodetectors based on graphene/amorphous Ga2O3 van der Waals heterojunctions. ACS Appl. Mater. Interfaces 12, 47714–47720 (2020).10.1021/acsami.0c10259 ↗
29. Mo, H. et al. Two-dimensional alloying molybdenum tin disulfide monolayers with fast photoresponse. ACS Appl. Mater. Interfaces 11, 39077 (2019).10.1021/acsami.9b13645 ↗
30. Gao, C. et al. Solar blind avalanche photodetector based on a n-β-Ga2O3/n-Si heterojunction via an introduction of AlN buffer layer for interface lattice and band engineering. Mat. Today Phys. 45, 101474 (2024).10.1016/j.mtphys.2024.101474 ↗
31. Manga, K. K. et al. High-performance broadband photodetector using solution-processible PbSe–TiO2–graphene hybrids. Adv. Mater. 24, 1697 (2012).10.1002/adma.201104399 ↗
32. Long, M. et al. Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus. Sci. Adv. 3, e1700589 (2017).10.1126/sciadv.1700589 ↗
33. Gu, Z., Huang, Z., Li, C., Li, M. & Song, Y. A general printing approach for scalable growth of perovskite single-crystal films. Sci. Adv. 4, eaat2390 (2018).10.1126/sciadv.aat2390 ↗
34. Duan, Y. et al. Programmable, high-resolution printing of spatially graded perovskites for multispectral photodetectors. Adv. Mater. 36, 2313946 (2024).10.1002/adma.202313946 ↗
35. Ren, Z. et al. A polarization-sensitive photodetector based on a AsP/MoS2 heterojunction. Chin. Opt. 14, 135–144 (2021).10.37188/CO.2020-0189 ↗
36. Sun, H. et al. Kilogram-scale high-yield production of PbI2 microcrystals for optimized photodetectors. J. Mater. Chem. C. 12, 6433–6442 (2024).10.1039/D4TC00966E ↗
37. Han, Y. et al. Rapid response solar blind deep UV photodetector with high detectivity based on graphene: N/β-Ga2O3: N/GaN p-i-n heterojunction fabricated by a reversed substitution growth method. Small Methods 7, 2300041 (2023).10.1002/smtd.202300041 ↗
38. Cai, Z. et al. Enhancing performance of GaN/Ga2O3 P-N junction UVC photodetectors via interdigitated structure. Small Methods 8, 2301148 (2023).10.1002/smtd.202301148 ↗
39. Wang, Y. et al. p-GaSe/n-Ga2O3 van der Waals heterostructure photodetector at solar-blind wavelengths with ultrahigh responsivity and detectivity. ACS Photonics 8, 2256–2264 (2021).10.1021/acsphotonics.1c00015 ↗
40. Xi, Z. et al. Comprehensive study on ultra-wide band gap La2O3/ε-Ga2O3 p–n heterojunction self-powered deep-UV photodiodes for flame sensing. ACS Appl. Mater. Interfaces 15, 40744–40752 (2023).10.1021/acsami.3c07597 ↗
41. Wu, C. et al. High sensitive and stable self-powered solar-blind photodetector based on solution-processed all inorganic CuMO2/Ga2O3 pn heterojunction. Mat. Today Phys. 17, 100335 (2021).10.1016/j.mtphys.2020.100335 ↗
42. Feng, S. et al. Dual-mode conversion of photodetector and neuromorphic vision sensor via bias voltage regulation on a single device. Adv. Mater. 35, 2308090 (2023).10.1002/adma.202308090 ↗
43. Chen, T. et al. High-speed and ultrasensitive solar-blind ultraviolet photodetectors based on in situ grown β-Ga2O3 single-crystal films. ACS Appl. Mater. Interfaces 16, 6068–6077 (2024).10.1021/acsami.3c15561 ↗
44. Li, X. –X. et al. High responsivity and flexible deep-UV phototransistor based on Ta-doped β-Ga2O3. npj Flex. Electron. 6, 47 (2022).10.1038/s41528-022-00179-3 ↗
45. Wang, Y. et al. Multifunctional solar-blind ultraviolet photodetectors based on p-PCDTBT/n-Ga2O3 heterojunction with high photoresponse. InfoMat 6, e12503 (2024).10.1002/inf2.12503 ↗
46. Lu, C. et al. Freestanding crystalline β-Ga2O3 flexible membrane obtained via lattice epitaxy engineering for high-performance optoelectronic device. ACS Nano 18, 5374–5382 (2024).
47. Meitei, S. R., Devi, L. S. & Singh, N. K. Ag nanoparticle decorated β-Ga2O3 nanowires on Si substrates: advancing photodetector technology. J. Phys. D: Appl. Phys. 57, 175103 (2024).10.1088/1361-6463/ad2295 ↗
48. Zhou, Y. et al. Solar-blind photodetector arrays fabricated by weaving strategy. ACS Nano 18, 7610–7617 (2024).10.1021/acsnano.4c00090 ↗
49. Prasad, C. V., Labed, M., Park, J. H., Kim, K. J. & Rim, Y. Charge-carrier engineering of staggered-gap p-CuAlO2/β-Ga2O3 bipolar heterojunction for self-powered photodetector with exceptional linear dynamic range and stability. Mat. Today Phys. 40, 101327 (2024).10.1016/j.mtphys.2024.101327 ↗
50. Zhang, Z. et al. Solar-blind imaging based on 2-inch polycrystalline diamond photodetector linear array. Carbon 173, 427–432 (2021).10.1016/j.carbon.2020.11.013 ↗
51. Hou, Y. et al. MgZnO based ultraviolet photodetector with high photoresponsivity achieved by fluorine doping. Thin Solid Films 634, 165–168 (2017).10.1016/j.tsf.2017.03.054 ↗
52. Young, S. –J. & Liu, Y. –H. Low-frequency noise properties of MgZnO nanorod ultraviolet photodetectors with and without UV illumination. Sens. Actuators A Phys. 269, 363–368 (2018).10.1016/j.sna.2017.11.044 ↗
53. Yu, J., Tian, N., Deng, Y. F. & Zhang, H. H. Ultraviolet photodetector based on sol–gel synthesized MgZnO nanoparticle with photoconductive gain. J. Alloy Compd. 667, 359–362 (2016).10.1016/j.jallcom.2016.01.169 ↗
54. Ping, Y. et al. Polarization sensitive solar-blind ultraviolet photodetectors based on ultrawide bandgap KNb3O8 nanobelt with fringe-like atomic lattice. Adv. Funct. Mater. 32, 2111673 (2022).10.1002/adfm.202111673 ↗
55. Zhang, Q. et al. Large-area self-assembled hexagonal boron nitride nanosheet films for ultralow dark current vacuum-ultraviolet photodetectors. Adv. Funct. Mater. 34, 2315149 (2024).10.1002/adfm.202315149 ↗
56. Lee, Y. et al. High-performance perovskite–graphene hybrid photodetector. Adv. Mater. 27, 41–46 (2015).10.1002/adma.201402271 ↗
57. Yu, J. et al. Amorphous gallium oxide nanosheets with broad absorption and spin polarization for Si-based UV‒Vis‒NIR photodetectors. Adv. Optical Mater. 12, 2302410 (2024).10.1002/adom.202302410 ↗
58. Han, D. et al. Performance enhancement of a p-Si/n-ZnGa2O4 heterojunction solar-blind UV photodetector through interface engineering. J. Mater. Chem. C. 9, 10013–10019 (2021).10.1039/D1TC01705E ↗
59. Zhang, Z. –F. et al. Wafer-sized polycrystalline diamond photodetector planar arrays for solar-blind imaging. J. Mater. Chem. C. 10, 6488–6496 (2022).10.1039/D2TC00327A ↗
60. Liu, Y. et al. Planar carbon nanotube–graphene hybrid films for high-performance broadband photodetectors. Nat. Commun. 6, 8589 (2015).10.1038/ncomms9589 ↗
61. Qiao, H. et al. Broadband photodetectors based on graphene–Bi2Te3 heterostructure. ACS Nano 9, 1886–1894 (2015).10.1021/nn506920z ↗
62. Wu, S. –C., Wu, M. –J. & Chen, Y. –F. Nanolayered graphene/hexagonal boron nitride/n-algan heterostructures as solar-blind deep-ultraviolet photodetectors. ACS Appl. Nano Mater. 3, 7595–7603 (2020).10.1021/acsanm.0c01219 ↗
63. Zhang, Z. –H. et al. Air-stable self-driven UV photodetectors on controllable lead-free CsCu2I3 microwire arrays. ACS Appl. Mater. Interfaces 16, 10398–10406 (2024).10.1021/acsami.3c17881 ↗
64. Zhang, N. et al. High-performance self-powered photoelectrochemical ultraviolet photodetectors based on an In2O3 nanocube film. ACS Appl. Mater. Interfaces 16, 19167–19174 (2024).10.1021/acsami.4c00801 ↗