High Chern number van der Waals magnetic topological multilayers MnBi2Te4/hBN
Source abstract
Abstract
Abstract Chern insulators are two-dimensional magnetic topological materials that conduct electricity along their edges via the one-dimensional chiral modes. The number of these modes is a topological invariant called the first Chern numberCthat defines the quantized Hall conductance asSxy = Ce2/h. IncreasingCis pivotal for the realization of low-power-consumption topological electronics, but there has been no clear-cut solution to this problem so far, with the majority of existing Chern insulators showingC = 1. Here, by using state-of-the-art theoretical methods, we propose an efficient approach for the realization of the high-Cstate in MnBi2Te4/hBN van der Waals multilayer heterostructures. We show that a stack ofnMnBi2Te4films withC = 1 intercalated by hBN monolayers gives rise to a high Chern number state withC = n, characterized bynchiral edge modes. This state can be achieved both under the external magnetic field and without it, both cases leading to the quantized Hall conductanceSxy = Ce2/h. Our results, therefore, pave the way to practical high-Cquantized Hall systems.
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OpenAlex topics: Topological Materials and Phenomena · Graphene research and applications · 2D Materials and Applications
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References (92)
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1. Haldane, F. D. M. Model for a quantum Hall effect without Landau levels: condensed-matter realization of the “parity anomaly”. Phys. Rev. Lett. 61, 2015–2018 (1988).10.1103/PhysRevLett.61.2015 ↗
2. He, K., Wang, Y. & Xue, Q.-K. Quantum anomalous Hall effect. Natl Sci. Rev. 1, 38–48 (2014).10.1093/nsr/nwt029 ↗
3. Tokura, Y., Yasuda, K. & Tsukazaki, A. Magnetic topological insulators. Nat. Rev. Phys. 1, 126–143 (2019).10.1038/s42254-018-0011-5 ↗
4. Chang, C.-Z., Liu, C.-X. & MacDonald, A. H. Colloquium: quantum anomalous Hall effect. Rev. Mod. Phys. 95, 011002 (2023).10.1103/RevModPhys.95.011002 ↗
5. v. Klitzing, K., Dorda, G. & Pepper, M. New method for high-accuracy determination of the fine-structure constant based on quantized Hall resistance. Phys. Rev. Lett. 45, 494–497 (1980).10.1103/PhysRevLett.45.494 ↗
6. Thouless, D. J., Kohmoto, M., Nightingale, M. P. & den Nijs, M. Quantized Hall conductance in a two-dimensional periodic potential. Phys. Rev. Lett. 49, 405 (1982).10.1103/PhysRevLett.49.405 ↗
7. Zhang, X. & Zhang, S.-C. Chiral interconnects based on topological insulators. Proc. SPIE 8373, 837309 (2012).10.1117/12.920325 ↗
8. Zhang, S.-C. & Wang, J. Autobahn interconnect in IC with multiple conduction lanes. US Patent 14/447,499 (2016).
9. Chang, C.-Z. et al. Experimental observation of the quantum anomalous Hall effect in a magnetic topological insulator. Science 340, 167–170 (2013).10.1126/science.1234414 ↗
10. Kou, X. et al. Scale-invariant quantum anomalous Hall effect in magnetic topological insulators beyond the two-dimensional limit. Phys. Rev. Lett. 113, 137201 (2014).10.1103/PhysRevLett.113.137201 ↗
11. Kandala, A., Richardella, A., Kempinger, S., Liu, C.-X. & Samarth, N. Giant anisotropic magnetoresistance in a quantum anomalous Hall insulator. Nat. Commun. 6, 7434 (2015).10.1038/ncomms8434 ↗
12. Mogi, M. et al. Magnetic modulation doping in topological insulators toward higher-temperature quantum anomalous Hall effect. Appl. Phys. Lett. 107, 182401 (2015).10.1063/1.4935075 ↗
13. Götz, M. et al. Precision measurement of the quantized anomalous Hall resistance at zero magnetic field. Appl. Phys. Lett. 112, 072102 (2018).10.1063/1.5009718 ↗
14. Okazaki, Y. et al. Quantum anomalous Hall effect with a permanent magnet defines a quantum resistance standard. Nat. Phys. 18, 25–29 (2022).10.1038/s41567-021-01424-8 ↗
15. Jiang, H., Qiao, Z., Liu, H. & Niu, Q. Quantum anomalous Hall effect with tunable Chern number in magnetic topological insulator film. Phys. Rev. B 85, 045445 (2012).10.1103/PhysRevB.85.045445 ↗
16. Wang, J., Lian, B., Zhang, H., Xu, Y. & Zhang, S.-C. Quantum anomalous Hall effect with higher plateaus. Phys. Rev. Lett. 111, 136801 (2013).10.1103/PhysRevLett.111.136801 ↗
17. Jiang, G. et al. Quantum anomalous Hall multilayers grown by molecular beam epitaxy. Chin. Phys. Lett. 35, 076802 (2018).10.1088/0256-307X/35/7/076802 ↗
18. Zhao, Y.-F. et al. Tuning the Chern number in quantum anomalous Hall insulators. Nature 588, 419–423 (2020).10.1038/s41586-020-3020-3 ↗
19. Burkov, A. A. & Balents, L. Weyl semimetal in a topological insulator multilayer. Phys. Rev. Lett. 107, 127205 (2011).10.1103/PhysRevLett.107.127205 ↗
20. Lee, C. et al. Imaging Dirac-mass disorder from magnetic dopant atoms in the ferromagnetic topological insulator. Proc. Natl Acad. Sci. USA 112, 1316 (2015).10.1073/pnas.1424322112 ↗
21. Chong, Y. X. et al. Severe Dirac mass gap suppression in Sb2Te3-based quantum anomalous Hall materials. Nano Lett. 20, 8001–8007 (2020).10.1021/acs.nanolett.0c02873 ↗
22. Lachman, E. O. et al. Visualization of superparamagnetic dynamics in magnetic topological insulators. Sci. Adv. 1, e1500740 (2015).10.1126/sciadv.1500740 ↗
23. Krieger, J. A. et al. Spectroscopic perspective on the interplay between electronic and magnetic properties of magnetically doped topological insulators. Phys. Rev. B 96, 184402 (2017).10.1103/PhysRevB.96.184402 ↗
24. Ou, Y. et al. Enhancing the quantum anomalous Hall effect by magnetic codoping in a topological insulator. Adv. Mater. 30, 1703062 (2018).10.1002/adma.201703062 ↗
25. Otrokov, M. M. et al. Prediction and observation of an antiferromagnetic topological insulator. Nature 576, 416–422 (2019).10.1038/s41586-019-1840-9 ↗
26. Deng, Y. et al. Quantum anomalous Hall effect in intrinsic magnetic topological insulator MnBi2Te4. Science 367, 895–900 (2020).10.1126/science.aax8156 ↗
27. Deng, H. et al. High-temperature quantum anomalous Hall regime in a MnBi2Te4/Bi2Te3 superlattice. Nat. Phys. 17, 36–42 (2021).10.1038/s41567-020-0998-2 ↗
28. Serlin, M. et al. Intrinsic quantized anomalous Hall effect in a moiré heterostructure. Science 367, 900–903 (2020).10.1126/science.aay5533 ↗
29. Li, T. et al. Quantum anomalous Hall effect from intertwined moiré bands. Nature 600, 641–646 (2021).10.1038/s41586-021-04171-1 ↗
30. Otrokov, M. M. et al. Unique thickness-dependent properties of the van der Waals interlayer antiferromagnet MnBi2Te4 films. Phys. Rev. Lett. 122, 107202 (2019).10.1103/PhysRevLett.122.107202 ↗
31. Mong, R. S. K., Essin, A. M. & Moore, J. E. Antiferromagnetic topological insulators. Phys. Rev. B 81, 245209 (2010).10.1103/PhysRevB.81.245209 ↗
32. Li, J. et al. Intrinsic magnetic topological insulators in van der Waals layered MnBi2Te4-family materials. Sci. Adv. 5, eaaw5685 (2019).10.1126/sciadv.aaw5685 ↗
33. Zhang, D. et al. Topological axion states in the magnetic insulator MnBi2Te4 with the quantized magnetoelectric effect. Phys. Rev. Lett. 122, 206401 (2019).10.1103/PhysRevLett.122.206401 ↗
34. Yan, J.-Q. et al. Crystal growth and magnetic structure of MnBi2Te4. Phys. Rev. Mater. 3, 064202 (2019).10.1103/PhysRevMaterials.3.064202 ↗
35. Liu, C. et al. Robust axion insulator and Chern insulator phases in a two-dimensional antiferromagnetic topological insulator. Nat. Mater. 19, 522–527 (2020).10.1038/s41563-019-0573-3 ↗
36. Ge, J. et al. High-Chern-number and high-temperature quantum Hall effect without Landau levels. Natl Sci. Rev. 7, 1280–1287 (2020).10.1093/nsr/nwaa089 ↗
37. Cai, J. et al. Electric control of a canted-antiferromagnetic Chern insulator. Nat. Commun. 13, 1668–1675 (2022).10.1038/s41467-022-29259-8 ↗
38. Hu, C. et al. Growth, characterization, and Chern insulator state in MnBi2Te4 via the chemical vapor transport method. Phys. Rev. Mater. 5, 124206 (2021).10.1103/PhysRevMaterials.5.124206 ↗
39. Liu, C. et al. Magnetic-field-induced robust zero Hall plateau state in MnBi2Te4 Chern insulator. Nat. Commun. 12, 4647–4653 (2021).10.1038/s41467-021-25002-x ↗
40. Ying, Z. et al. Experimental evidence for dissipationless transport of the chiral edge state of the high-field Chern insulator in MnBi2Te4 nanodevices. Phys. Rev. B 105, 085412 (2022).10.1103/PhysRevB.105.085412 ↗
41. Gao, A. et al. Layer Hall effect in a 2D topological axion antiferromagnet. Nature 595, 521–525 (2021).10.1038/s41586-021-03679-w ↗
42. Ovchinnikov, D. et al. Intertwined topological and magnetic orders in atomically thin Chern insulator MnBi2Te4. Nano Lett. 21, 2544–2550 (2021).10.1021/acs.nanolett.0c05117 ↗
43. Britnell, L. et al. Field-effect tunneling transistor based on vertical graphene heterostructures. Science 335, 947–950 (2012).10.1126/science.1218461 ↗
44. Dean, C. R. et al. Boron nitride substrates for high-quality graphene electronics. Nat. Nanotechnol. 5, 722–726 (2010).10.1038/nnano.2010.172 ↗
45. Geim, A. K. & Grigorieva, I. V. Van der Waals heterostructures. Nature 499, 419–425 (2013).10.1038/nature12385 ↗
46. Novoselov, K., Mishchenko, A., Carvalho, A. & Castro Neto, A. 2D materials and van der Waals heterostructures. Science 353, aac9439 (2016).10.1126/science.aac9439 ↗
47. Lee, D. S. et al. Crystal structure, properties and nanostructuring of a new layered chalcogenide semiconductor, Bi2MnTe4. CrystEngComm 15, 5532–5538 (2013).10.1039/c3ce40643a ↗
48. Aliev, Z. S. et al. Novel ternary layered manganese bismuth tellurides of the MnTe-Bi2Te3 system: synthesis and crystal structure. J. Alloys Compd. 789, 443 – 450 (2019).10.1016/j.jallcom.2019.03.030 ↗
49. Zeugner, A. et al. Chemical aspects of the candidate antiferromagnetic topological insulator MnBi2Te4. Chem. Mater. 31, 2795–2806 (2019).10.1021/acs.chemmater.8b05017 ↗
50. Lee, S. H. et al. Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator MnBi2Te4. Phys. Rev. Res. 1, 012011 (2019).10.1103/PhysRevResearch.1.012011 ↗
51. Gao, R., Qin, G., Qi, S., Qiao, Z. & Ren, W. Quantum anomalous Hall effect in MnBi2Te4 van der Waals heterostructures. Phys. Rev. Mater. 5, 114201 (2021).10.1103/PhysRevMaterials.5.114201 ↗
52. Bai, Y. et al. Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi2Te4 thin films. Preprint at https://arxiv.org/abs/2206.03773 (2022).10.1093/nsr/nwad189 ↗
53. Wu, J. et al. Natural van der Waals heterostructural single crystals with both magnetic and topological properties. Sci. Adv. 5, eaax9989 (2019).10.1126/sciadv.aax9989 ↗
54. Vidal, R. C. et al. Topological electronic structure and intrinsic magnetization in MnBi4Te7: a Bi2Te3 derivative with a periodic Mn sublattice. Phys. Rev. X 9, 041065 (2019).
55. Hu, C. et al. A van der Waals antiferromagnetic topological insulator with weak interlayer magnetic coupling. Nat. Commun. 11, 97–105 (2020).10.1038/s41467-019-13814-x ↗
56. Klimovskikh, I. I. et al. Tunable 3D/2D magnetism in the (MnBi2Te4)(Bi2Te3)m topological insulators family. npj Quantum Mater. 5, 9 (2020).10.1038/s41535-020-00255-9 ↗
57. Tan, A. et al. Metamagnetism of weakly coupled antiferromagnetic topological insulators. Phys. Rev. Lett. 124, 197201 (2020).10.1103/PhysRevLett.124.197201 ↗
58. Chen, G. et al. Tunable correlated Chern insulator and ferromagnetism in a moiré superlattice. Nature 579, 56–61 (2020).10.1038/s41586-020-2049-7 ↗
59. Zhang, C. et al. Visualizing and manipulating chiral edge states in a moiré quantum anomalous Hall insulator. Preprint at https://arxiv.org/abs/2212.03380 (2022).
60. Chang, C.-Z. et al. High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator. Nat. Mater. 14, 473–477 (2015).10.1038/nmat4204 ↗
61. Hao, Y.-J. et al. Gapless surface Dirac cone in antiferromagnetic topological insulator MnBi2Te4. Phys. Rev. X 9, 041038 (2019).
62. Li, H. et al. Dirac surface states in intrinsic magnetic topological insulators EuSn2As2 and MnBi2nTe3n+1. Phys. Rev. X 9, 041039 (2019).
63. Chen, Y. J. et al. Topological electronic structure and its temperature evolution in antiferromagnetic topological insulator MnBi2Te4. Phys. Rev. X 9, 041040 (2019).
64. Swatek, P. et al. Gapless Dirac surface states in the antiferromagnetic topological insulator MnBi2Te4. Phys. Rev. B 101, 161109 (2020).10.1103/PhysRevB.101.161109 ↗
65. Shikin, A. M. et al. Sample-dependent Dirac-point gap in MnBi2Te4 and its response to applied surface charge: a combined photoemission and ab initio study. Phys. Rev. B 104, 115168 (2021).10.1103/PhysRevB.104.115168 ↗
66. Garnica, M. et al. Native point defects and their implications for the Dirac point gap at MnBi2Te4 (0001). npj Quantum Mater. 7, 7 (2022).10.1038/s41535-021-00414-6 ↗
67. Du, M.-H., Yan, J., Cooper, V. R. & Eisenbach, M. Tuning Fermi levels in intrinsic antiferromagnetic topological insulators MnBi2Te4 and MnBi4Te7 by defect engineering and chemical doping. Adv. Funct. Mater. 31, 2006516 (2021).10.1002/adfm.202006516 ↗
68. Liu, M. et al. Visualizing the interplay of Dirac mass gap and magnetism at nanoscale in intrinsic magnetic topological insulators. Proc. Natl Acad. Sci. USA 119, e2207681119 (2022).10.1073/pnas.2207681119 ↗
69. Otrokov, M. M. et al. Highly-ordered wide bandgap materials for quantized anomalous Hall and magnetoelectric effects. 2D Mater. 4, 025082 (2017).10.1088/2053-1583/aa6bec ↗
70. Li, Q. et al. Large magnetic gap in a designer ferromagnet–topological insulator–ferromagnet heterostructure. Adv. Mater. 34, 2107520 (2022).10.1002/adma.202107520 ↗
71. Wimmer, S. et al. Mn-rich MnSb2Te4: a topological insulator with magnetic gap closing at high Curie temperatures of 45-50 K. Adv. Mater. 33, 2102935 (2021).10.1002/adma.202102935 ↗
72. Eremeev, S. V. et al. Topological magnetic materials of the (MnSb2Te4) ⋅ (Sb2Te3)n van der Waals compounds family. J. Phys. Chem. Lett. 12, 4268 (2021).10.1021/acs.jpclett.1c00875 ↗
73. Wu, J. et al. Toward 2D magnets in the (MnBi2Te4)(Bi2Te3)n bulk crystal. Adv. Mater. 32, e2001815 (2020).10.1002/adma.202001815 ↗
74. Xu, H.-K. et al. Observation of magnetism-induced topological edge state in antiferromagnetic topological insulator MnBi4Te7. ACS Nano 16, 9810–9818 (2022).10.1021/acsnano.2c03622 ↗
75. Kresse, G. & Hafner, J. Ab initio molecular dynamics for liquid metals. Phys. Rev. B 47, 558–561 (1993).10.1103/PhysRevB.47.558 ↗
76. Kresse, G. & Hafner, J. Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium. Phys. Rev. B 49, 14251–14269 (1994).10.1103/PhysRevB.49.14251 ↗
77. Kresse, G. & Furthmüller, J. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comput. Mater. Sci. 6, 15–50 (1996).10.1016/0927-0256(96)00008-0 ↗
78. Kresse, G. & Furthmüller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54, 11169–11186 (1996).10.1103/PhysRevB.54.11169 ↗
79. Kresse, G. & Joubert, D. From ultrasoft pseudopotentials to the projector augmented-wave method. Phys. Rev. B 59, 1758–1775 (1999).10.1103/PhysRevB.59.1758 ↗
80. Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865 (1996).10.1103/PhysRevLett.77.3865 ↗
81. Grimme, S., Antony, J., Ehrlich, S. & Krieg, H. A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu. J. Chem. Phys. 132, 154104 (2010).10.1063/1.3382344 ↗
82. Grimme, S., Ehrlich, S. & Goerigk, L. Effect of the damping function in dispersion corrected density functional theory. J. Comput. Chem. 32, 1456–1465 (2011).10.1002/jcc.21759 ↗
83. Anisimov, V. I., Zaanen, J. & Andersen, O. K. Band theory and Mott insulators: Hubbard U instead of Stoner I. Phys. Rev. B 44, 943–954 (1991).10.1103/PhysRevB.44.943 ↗
84. Dudarev, S. L., Botton, G. A., Savrasov, S. Y., Humphreys, C. J. & Sutton, A. P. Electron-energy-loss spectra and the structural stability of nickel oxide: an LSDA+U study. Phys. Rev. B 57, 1505–1509 (1998).10.1103/PhysRevB.57.1505 ↗
85. Hirahara, T. et al. Fabrication of a novel magnetic topological heterostructure and temperature evolution of its massive Dirac cone. Nat. Commun. 11, 4821 (2020).10.1038/s41467-020-18645-9 ↗
86. Mostofi, A. A. et al. An updated version of Wannier90: a tool for obtaining maximally-localised Wannier functions. Comput. Phys. Commun. 185, 2309–2310 (2014).10.1016/j.cpc.2014.05.003 ↗
87. Pizzi, G. et al. Wannier90 as a community code: new features and applications. J. Condens. Matter Phys. 32, 165902 (2020).10.1088/1361-648X/ab51ff ↗
88. Tsirkin, S. S. High performance Wannier interpolation of Berry curvature and related quantities with WannierBerri code. NPJ Comput. Mater. 7, 33 (2021).10.1038/s41524-021-00498-5 ↗
89. Soluyanov, A. A. & Vanderbilt, D. Computing topological invariants without inversion symmetry. Phys. Rev. B 83, 235401 (2011).10.1103/PhysRevB.83.235401 ↗
90. Gresch, D. et al. Z2Pack: numerical implementation of hybrid Wannier centers for identifying topological materials. Phys. Rev. B 95, 075146 (2017).10.1103/PhysRevB.95.075146 ↗
91. Sancho, M. P. L., Sancho, J. M. L., Sancho, J. M. L. & Rubio, J. Highly convergent schemes for the calculation of bulk and surface Green functions. J. Phys. F: Met. Phys. 15, 851–858 (1985).10.1088/0305-4608/15/4/009 ↗
92. Wu, Q., Zhang, S., Song, H.-F., Troyer, M. & Soluyanov, A. A. WannierTools : an open-source software package for novel topological materials. Comput. Phys. Commun. 224, 405–416 (2018).10.1016/j.cpc.2017.09.033 ↗