Transient photodoping and phonon dynamics in bulk and monolayer MoS2 by time resolved Raman scattering
Source abstract
Abstract
We study the phonon dynamics of bulk and monolayer MoS 2 under strong, transient photodoping by time resolved spontaneous Raman scattering (TRRS). By measuring the frequency and effective temperature evolution of each Raman active mode, TRRS allows to map the doping-induced changes in the phonon spectrum and to assess the energy transfer between the electron and phonon degrees of freedom. Our results demonstrate the occurrence of a photodoping-induced phonon renormalization and represent a first direct observation of a clear difference in the electron-phonon coupling between the “hot”, strongly coupled A-symmetry mode and the “colder” E-symmetry one. We provide a model to map the energy redistribution in bulk and monolayer MoS 2 , describing their different relaxation dynamics. We demonstrate that detailed information on the electronic behaviour can be drawn by probing the phonon dynamics by TRRS. That allows envisioning the tuning of electronic and transport properties of semiconducting layered materials through phononic approaches.
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Research context
OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Machine Learning in Materials Science
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (53)
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