Preparation and characterisation of ZnO:Ga films deposited on polyimide substrate by r.f. magnetron sputtering

Gallium-doped Zinc Oxide (GZO) thin films have been deposited onto Polyimide (PI) substrate by r.f. magnetron sputtering. The effects of the sputtering argon pressure, r.f. power, target-substrate distance, negative substrate bias on the electrical, structural, morphological properties and the growth rate of film are presented. The best results were obtained for a distance of 70 mm, argon sputtering pressure of 0.1 Pa, r.f. power of 100 W and the negative substrate bias of 40 V, where a resistivity of 9.4 ? 10−4 Ω cm was achieved. The transmittance in the visible range exceeded 78%.