Improvement of compositional homogeneity in In_{1-xGa_{xAs bulk crystals grown by the travelling liquidus-zone method

Homogeneity of In1-xGaxAs bulk crystals grown by the Travelling Liquidus-Zone (TLZ) method was improved by controlling the position of the freezing interface. This was achieved by matching precisely the rate of sample translation with the freezing rate that was calculated as a function of temperature gradient in the liquidus-zone through our one-dimensional TLZ growth model. Furthermore, results show that the sample translation at a constant rate from the beginning to the end of the crystal growth process is sufficient for the growth of homogeneous crystals, and no complicated procedures such as feedback of the interface temperature, and/or supply of the solute during crystal growth are required. This is an important feature (advantage) of the TLZ method over other growth techniques used to grow homogeneous alloy crystals.