Preparation of tin disulphide thin films by solution growth
Source abstract
Abstract
A chemical method has been developed for depositing tin disulphide (SnS,) thin films onto glass substrates at room temperature. The films were found to have n type conductivity with optical band gap of about 2.3 eV. Some of the optical and electrical properties of these films were also investigated.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Semiconductor materials and interfaces
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