Low-voltage silicon chip/glass ring anodic bonding for MEMS device packaging and experimental evaluation of bonding quality

Packaging technologies are a great issue in MEMS/NEMS device fabrication. Silicon to glass anodic bonding is a common bonding technique for packaging. In this paper, we describe low voltage silicon chip/glass ring anodic bonding to meet the need of MEMS device batch fabrication. The bonding voltage decreases to be 160 V and the bonding time is cut down from 30 minutes to be about two minutes. The anodic bonding quality of silicon chip/glass ring, effects of thermal cycling and thermal shock, are evaluated in details. The bonding strength is measured using a tensile tester and the fracture mainly occurs inside the silicon chip rather than along the interface. The bonding surface has large adherence intension and can work under harsh environment.