Fundamental investigation of silicon wafer edge treatment by ultrasonically assisted polishing (UAP)
Source abstract
Abstract
As a step toward the complete establishment of the silicon wafer edge treatment technique by ultrasonically assisted polishing (UAP) proposed in previous works (Yang et al., 2008; Kobayashi, 2008), the present work deals with the effects of several dominant process parameters (i.e., wafer rotational speed and slurry supply rate) on the wafer surface topography, the surface roughness, and the material removal in details. The obtained experimental results showed that:
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Advanced ceramic materials synthesis · Advanced machining processes and optimization
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