The influence of gas pressure and bias current on the crystallinity of highly boron-doped diamond films
Source abstract
Abstract
Highly boron-doped diamond (BDD) films were deposited by hot filament chemical vapor deposition on a silicon substrate with different gas pressures and bias currents. The surface morphology and the structure of the diamond films were analyzed by scanning electron microscopy, Raman spectroscopy, and X-ray diffraction. Results indicated that the quality of the highly BDD films tended to be improved when the gas pressure decreased from 3 to 1.5 kPa, whereas they showed an opposite trend with a further decrease of the gas pressure from 1.5 to 0.5 kPa. An appropriate bias current (3A) was favorable in improving the qualities of the diamond films and a higher bias current led to an increase of the non-diamond phase in the films.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Diamond and Carbon-based Materials Research · Metal and Thin Film Mechanics · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (21)
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