Numerical Modeling of Grain Boundary Effects in the Diffusional Creep of Copper Interconnect Lines
Source abstract
Abstract
We propose a numerical simulation technique to model the process of diffusional creep and stress relaxation that occurs in Cu-damascene interconnects of integrated circuit devices in processing stage. The mass flow problem is coupled to the stress analysis through vacancy flux and equilibrium vacancy concentration. The technique is implemented in a software package that seamlessly integrates the problem-oriented code with commercially available finite element program MSC.Marc. It is utilized to model the Coble creep phenomenon by introducing the nanoscale grain boundary region having the thickness on the order of several layers of atoms. As an illustration, the two-dimensional problem of stress relaxation in a single grain subjected to prescribed displacements and tractions is examined.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Copper Interconnects and Reliability · Electronic Packaging and Soldering Technologies · Microstructure and mechanical properties
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References (8)
Show source-provided references
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