Laser machining fundamentals: micro, nano, atomic and close-to-atomic scales
Source abstract
Abstract
Abstract With the rapid development in advanced industries, such as microelectronics and optics sectors, the functional feature size of devises/components has been decreasing from micro to nanometric, and even ACS for higher performance, smaller volume and lower energy consumption. By this time, a great many quantum structures are proposed, with not only an extreme scale of several or even single atom, but also a nearly ideal lattice structure with no material defect. It is almost no doubt that such structures play critical role in the next generation products, which shows an urgent demand for the ACSM. Laser machining is one of the most important approaches widely used in engineering and scientific research. It is high-efficient and applicable for most kinds of materials. Moreover, the processing scale covers a huge range from millimeters to nanometers, and has already touched the atomic level. Laser–material interaction mechanism, as the foundation of laser machining, determines the machining accuracy and surface quality. It becomes much more sophisticated and dominant with a decrease in processing scale, which is systematically reviewed in this article. In general, the mechanisms of laser-induced material removal are classified into ablation, CE and atomic desorption, with a decrease in the scale from above microns to angstroms. The effects of processing parameters on both fundamental material response and machined surface quality are discussed, as well as theoretical methods to simulate and understand the underlying mechanisms. Examples at nanometric to atomic scale are provided, which demonstrate the capability of laser machining in achieving the ultimate precision and becoming a promising approach to ACSM.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Laser Material Processing Techniques · Nonlinear Optical Materials Studies · Laser-Ablation Synthesis of Nanoparticles
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (100+)
Show source-provided references
1. The fabrication of fine lens arrays by laser beam writing10.1117/12.935397 ↗
2. Finer features for functional microdevices10.1038/35089130 ↗
3. Three-dimensional bichiral plasmonic crystals fabricated by direct laser writing and electroless silver plating10.1002/adma.201100543 ↗
4. Magnetic nickel-phosphorus/polymer composite and remotely driven three-dimensional micromachine fabricated by nanoplating and two-photon polymerization10.1021/jp202644d ↗
5. Direct laser writing of three-dimensional photonic crystals with a complete photonic bandgap in chalcogenide glasses10.1002/adma.200501973 ↗
6. Dry-etching-assisted femtosecond laser machining10.1002/lpor.201600115 ↗
7. Progresses on new generation laser direct writing technique10.1016/j.mtnano.2021.100142 ↗
8. Femtosecond laser inscription of depressed cladding single-mode mid-infrared waveguides in sapphire10.1364/OL.44.000037 ↗
9. Non-diffraction-length, tunable, Bessel-like beams generation by spatially shaping a femtosecond laser beam for high-aspect-ratio micro-hole drilling10.1364/OE.26.021960 ↗
10. Microstructuring of silicon with femtosecond laser pulses10.1063/1.122241 ↗
11. General strategy toward dual-scale-controlled metallic micro−nano hybrid structures with ultralow reflectance10.1021/acsnano.7b03673 ↗
12. Superomniphobic, transparent, and antireflection surfaces based on hierarchical nanostructures10.1021/nl501767j ↗
13. Irregular LIPSS produced on metals by single linearly polarized femtosecond laser10.1088/2631-7990/ac376c ↗
14. Laser interference fabrication of large-area functional periodic structure surface10.1007/s11465-018-0507-9 ↗
15. Compact vectorial optical field generator using a single phase-only spatial light modulator10.1364/OL.432800 ↗
16. High precision reconstruction for compressed femtosecond dynamics images based on the TVAL3 algorithm10.1364/OME.468475 ↗
17. Three-dimensional microfabrication with two-photon-absorbed photopolymerization10.1364/OL.22.000132 ↗
18. Two-photon direct laser writing beyond the diffraction limit using the nanopositioning and nanomeasuring machine10.1007/s41871-021-00100-y ↗
19. Laser interference lithography for fabrication of planar scale gratings for optical metrology10.1007/s41871-020-00083-2 ↗
20. Generation of micro/nano hybrid surface structures on copper by femtosecond pulsed laser irradiation10.1007/s41871-022-00135-9 ↗
21. Recent progress in laser texturing of battery materials: a review of tuning electrochemical performances, related material development, and prospects for large-scale manufacturing10.1088/2631-7990/abca84 ↗
22. Underwater persistent bubble-assisted femtosecond laser ablation for hierarchical micro/nanostructuring10.1088/2631-7990/ab729f ↗
23. Origins of ultrafast pulse laser-induced nano straight lines with potential applications in detecting subsurface defects in silicon carbide wafers10.1007/s41871-022-00133-x ↗
24. Reconfigurable magnetic liquid metal robot for high-performance droplet manipulation10.1021/acs.nanolett.2c00100 ↗
25. Environmentally adaptive shape-morphing microrobots for localized cancer cell treatment10.1021/acsnano.1c06651 ↗
26. Photochemical atomic layer deposition and etching10.1016/j.surfcoat.2016.02.046 ↗
27. Production and processing of graphene and 2D crystals10.1016/S1369-7021(13)70014-2 ↗
28. Etching techniques in 2D materials10.1002/admt.201900064 ↗
29. Fundamentals of atomic and close-to-atomic scale manufacturing: a review10.1088/2631-7990/ac3bb2 ↗
30. Atomic and close-to-atomic scale manufacturing: perspectives and measures10.1088/2631-7990/aba495 ↗
31. The three paradigms of manufacturing advancement10.1016/j.jmsy.2022.05.007 ↗
32. Toward single-atomic-layer lithography on highly oriented pyrolytic graphite surfaces using AFM-based electrochemical etching10.1007/s41871-022-00127-9 ↗
33. Atomic layer processes for material growth and etching—a review10.1109/TSM.2021.3112502 ↗
34. Fundamentals of ultrafast laser–material interaction10.1557/mrs.2016.274 ↗
35. Short-pulse ablation rates and the two-temperature model10.1016/j.apsusc.2007.01.045 ↗
36. Atomistic simulation of laser ablation of gold: effect of pressure relaxation10.1134/S1063776112040115 ↗
37. Atomistic simulation of laser ablation of gold: the effect of electronic pressure10.1063/1.3686424 ↗
38. First-principles electron dynamics simulation for optical breakdown of dielectrics under an intense laser field10.1103/PhysRevB.77.165104 ↗
39. Formation mechanisms of sub-wavelength ripples during femtosecond laser pulse train processing of dielectrics10.1088/0022-3727/45/17/175301 ↗
40. Coulomb explosion in ultrashort pulsed laser ablation of Al2O310.1103/PhysRevB.62.13167 ↗
41. Deep UV laser etching of GaN epilayers grown on sapphire substrate10.1016/j.jmatprotec.2011.08.022 ↗
42. F2 laser etching of GaN10.1016/S0169-4332(00)00783-2 ↗
43. Improvement of resolution in nano-fabrication of GaN by wet-chemical-assisted femtosecond laser ablation10.2961/jlmn.2010.01.0005 ↗
44. Coulomb explosion and early plasma generation during femtosecond laser ablation of silicon at high laser fluence10.1088/0022-3727/46/33/335501 ↗
45. Possible evidence of Coulomb explosion in the femtosecond laser ablation of metal at low laser fluence10.1016/j.apsusc.2015.07.136 ↗
46. Laser ablation of dielectrics with temporally shaped femtosecond pulses10.1063/1.1432747 ↗
47. Femtosecond laser induced Coulomb explosion from calcium fluoride10.1016/j.tsf.2003.11.096 ↗
48. Coulomb explosion in femtosecond laser ablation of Si(111)10.1063/1.1580647 ↗
49. Ultra-short laser ablation of metals and semiconductors: evidence of ultra-fast Coulomb explosion10.1007/s00339-006-3499-y ↗
50. Emission of ions and charged clusters due to impulsive Coulomb explosion in ultrafast laser ablation of graphite10.1103/PhysRevB.76.073401 ↗
51. A coulomb explosion theoretical model of femtosecond laser ablation materials10.1007/s11431-011-4702-8 ↗
52. The effect of emitted electrons during femtosecond laser–metal interactions: a physical explanation for coulomb explosion in metals10.1016/j.apsusc.2014.01.112 ↗
53. Electron gas compression and Coulomb explosion in the surface layer of a conductor heated by femtosecond laser pulse10.1134/1.1397751 ↗
54. A general continuum approach to describe fast electronic transport in pulsed laser irradiated materials: the problem of Coulomb explosion10.1007/s00339-005-3242-0 ↗
55. Translational energy distribution of Si atoms desorbed by laser-induced electronic bond breaking of adatoms on Si(111)-(7×7)10.1103/PhysRevLett.82.644 ↗
56. Laser-induced electronic bond breaking and desorption of adatoms on Si(111)-(7×7)10.1103/PhysRevLett.80.4080 ↗
57. Laser-induced bond breaking of the adatoms of the Si (111)-7×7 surface10.1016/0039-6028(95)01346-6 ↗
58. Selective laser removal of the dimer layer from Si(100) surfaces revealed by scanning tunneling microscopy10.1103/PhysRevB.53.R4245 ↗
59. Primary processes of laser-induced selective dimer-layer removal on Si(001)-(2×1)10.1103/PhysRevLett.89.257601 ↗
60. Laser-induced desorption from STM-selected semicondutor sites10.1016/S0079-6816(99)00007-6 ↗
61. Materials modification by electronic excitation10.1080/10420150108214126 ↗
62. Photoetching of Si(111)-(7×7) studied by STM10.1016/S0039-6028(96)01403-3 ↗
63. Structural preablation dynamics of graphite observed by ultrafast electron crystallography10.1103/PhysRevLett.100.035501 ↗
64. Direct observation of optically induced transient structures in graphite using ultrafast electron crystallography10.1103/PhysRevLett.101.077401 ↗
65. A new route to graphene layers by selective laser ablation10.1063/1.3584204 ↗
66. Laser induced non-thermal deposition of ultrathin graphite10.1063/1.3703599 ↗
67. Layer-by-layer thinning of MoS2 via laser irradiation10.1088/1361-6528/ab11ad ↗
68. Atomic-scale analysis of hydrogen bond breaking from Si(100): h induced by optical electronic excitation10.1103/PhysRevB.72.233304 ↗
69. Photon-stimulated desorption mechanism of Cl+ ions from Cl/Si(111) surface10.1143/JJAP.33.2248 ↗
70. Stimulated desorption of Cl+ and the chemisorption of Cl2 on Si(111)-7×7 and Si(100)-2×110.1016/0039-6028(94)91218-1 ↗
71. STM study of laser-induced desorption from Si(111) surfaces with adsorbates10.1016/0039-6028(96)00156-2 ↗
72. The atomic processes of ultraviolet laser-induced etching of chlorinated silicon (1 1 1) surface10.1016/S0169-4332(02)00340-9 ↗
73. Laser-induced mono-atomic-layer etching on Cl-adsorbed Si(111) surfaces10.1016/S0169-4332(98)00031-2 ↗
74. Laser bilayer etching of GaAs surfaces10.1063/1.102097 ↗
75. Digital etching using KrF excimer laser: approach to atomic-order-controlled etching by photo induced reaction10.1143/JJAP.32.6178 ↗
76. Control of the etching reaction of digital etching using tunable UV laser irradation10.1016/0169-4332(94)90216-X ↗
77. Laser interaction with Br-GaAs(110): etching and atomic desorption10.1103/PhysRevB.58.10981 ↗
78. Layer-by-layer etching of GaAs (110) with halogenation and pulsed-laser irradiation10.1116/1.581048 ↗
79. Spontaneous and laser-enhanced halogen etching of GaAs(110)10.1088/0953-8984/10/35/007 ↗
80. Study on mechanisms of photon-induced material removal on silicon at atomic and close-to-atomic scale10.1007/s41871-021-00116-4 ↗
81. Photochemical etching of carbonyl groups from a carbon matrix: the (001) diamond surface10.1103/PhysRevLett.122.016802 ↗
82. Laser micromachining of semiconductors for photonics applications10.1117/12.446542 ↗
83. An assessment of tunneling-multiphoton dichotomy in atomic photo-ionization: Keldysh parameter versus scaled frequency
84. Transient localized electron dynamics simulation during femtosecond laser tunnel ionization of diamond10.1016/j.physleta.2012.07.039 ↗
85. First-principles calculations for multiphoton absorption in α-quartz under intense short laser irradiation10.1088/0953-8984/22/38/384204 ↗
86. Temporal-spatial measurement of electron relaxation time in femtosecond laser induced plasma using two-color pump-probe imaging technique10.1063/1.5009062 ↗
87. Repeatable nanostructures in dielectrics by femtosecond laser pulse trains10.1063/1.2093935 ↗
88. Molecular dynamics simulation of laser melting of nanocrystalline Au10.1021/jp909328q ↗
89. Fox · 2010
90. Positive ion emission from excimer laser excited MgO surfaces10.1103/PhysRevLett.73.2630 ↗
91. Electron- and photon-stimulated modification of GaAs(110), Si(100), and Si(111)10.1103/PhysRevB.60.13846 ↗
92. Laser induced electron and sodium ion emission from single crystal NaNO3 at 1064 nm10.1063/1.372043 ↗
93. Fabrication of blue GaN light-emitting diodes by laser etching10.1143/JJAP.41.L468 ↗
94. KrF excimer laser induced ablation–planarization of GaN surface10.1016/S0169-4332(99)00156-7 ↗
95. Precise microfabrication of wide band gap semiconductors (SiC and GaN) by VUV–UV multiwavelength laser ablation10.1016/S0169-4332(97)00744-7 ↗
96. GaN ablation etching by simultaneous irradiation with F2 laser and KrF excimer laser10.1116/1.1385683 ↗
97. Deep etching of epitaxial gallium nitride film by multiwavelength excitation process using F2 and KrF excimer lasers10.1007/s00339-005-3409-8 ↗
98. Low-threshold ablation of dielectrics irradiated by picosecond soft x-ray laser pulses10.1063/1.3152290 ↗
99. Damage and ablation of large bandgap dielectrics induced by a 46.9 nm laser beam10.1364/OL.31.000068 ↗
100. Two-temperature warm dense matter produced by ultrashort extreme vacuum ultraviolet-free electron laser (EUV-FEL) pulse10.1002/ctpp.201110013 ↗