journal article·2016-03

Effect of Sintering Temperature on Thermoelectric Properties of p‐Bi 2 Te 3 Alloys Produced by Gas Atomization

Babu Madavali, Hyo‐Seob Kim, Min‐Gyu Choi, Gi‐Chan Park, Jar‐Myung Koo, Hyeon‐Taek Son, Soon‐Jik Hong

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Abstract

In this research, p‐type Bi 2 Te 3 –75% Sb 2 Te 3 thermoelectric alloy powders were produced by gas atomization and subsequently sintered by hot pressing at different temperatures. The grain growth of the hot‐pressed samples was observed with increasing sintering temperature from 380°C to 460°C. The compressive strength increased with increasing hot‐pressing temperature due to the high relative density of bulk samples obtained at high temperatures. The effect of sintering temperature on thermoelectric (TE) properties was studied. The maximum power factor 3.48 mW/mK 2 was obtained for the sample hot pressed at 420°C due to the resulting high electrical conductivity and enhanced Seebeck coefficient values.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal properties of materials · Thermal Radiation and Cooling Technologies

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Affiliations

Division of Advanced Materials Engineering & Institute for Rare Metals Kongju National University Cheonan 331‐717 Korea

Automative components R&D Group Korea Institute of Industrial Technology 1110‐9 Oryang‐dong Buk‐gu Gwangju 5000‐480 Korea

Funding

Korea Institute of Energy Technology Evaluation and Planning · Ministry of Knowledge Economy · National Research Foundation · Ministry of Education, Science and Technology

References (19)

Show source-provided references
1. 10.1111/j.1744-7402.2007.02143.x10.1111/j.1744-7402.2007.02143.x ↗
2. 10.1016/0038-1101(72)90172-410.1016/0038-1101(72)90172-4 ↗
3. 10.1111/j.1744-7402.2007.02144.x10.1111/j.1744-7402.2007.02144.x ↗
4. 10.1002/adma.20060052710.1002/adma.200600527 ↗
5. H.Scherrer M.Chitroub C.Roche andS.Scherrer ICT Proceedings IEEE Piscata way NJ 115–120 1998.
6. 10.1016/S0022-3697(97)00187-X10.1016/S0022-3697(97)00187-X ↗
7. 10.1016/0022-3697(94)00166-910.1016/0022-3697(94)00166-9 ↗
8. 10.1016/j.intermet.2012.09.00710.1016/j.intermet.2012.09.007 ↗
9. 10.1515/amm-2015-010410.1515/amm-2015-0104 ↗
10. 10.3139/147.11022110.3139/147.110221 ↗
11. 10.1016/S0925-8388(00)01063-X10.1016/S0925-8388(00)01063-X ↗
12. 10.1016/j.mseb.2005.01.00210.1016/j.mseb.2005.01.002 ↗
13. 10.1007/s11664-014-3077-610.1007/s11664-014-3077-6 ↗
14. 10.1016/j.jallcom.2010.03.11410.1016/j.jallcom.2010.03.114 ↗
15. 10.1016/j.jallcom.2005.03.02110.1016/j.jallcom.2005.03.021 ↗
16. 10.1007/s11164-014-1666-x10.1007/s11164-014-1666-x ↗
17. 10.1016/S0925-8388(00)01159-210.1016/S0925-8388(00)01159-2 ↗
18. 10.1039/c2jm15185e10.1039/c2jm15185e ↗
19. 10.2320/matertrans.43.68110.2320/matertrans.43.681 ↗