Low‐temperature sintering and electrical properties of BBSZ glass‐doped ZnO‐based multilayer varistors
Source abstract
Abstract
Abstract The effect of Bi 2 O 3 ‐B 2 O 3 ‐SiO 2 ‐ZnO glass (denoted as BBSZ) content on the densification, microstructure, and electrical properties of ZnO‐based multilayer varistors (MLVs) has been investigated. In ZnO‐based (MLVs), BBSZ acted as a promoter in ZnO grain growth, which increased the grain size of ZnO, resulting in a decrease in breakdown voltage. Results showed that the adding of BBSZ glass had an improvement in densification and overall properties of MLVs. It was found that a maximum value of 5.45 g/cm 3 of the bulk density and the optimum properties ( V 1mA = 27.28 V, α = 40.33, I L = 0.75 μA, I p = 35 A) of ZnO‐based MLVs were achieved with 3 wt% BBSZ glass sintered at 925°C for 3 hours.
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Research context
OpenAlex topics: ZnO doping and properties · Thin-Film Transistor Technologies · Dielectric properties of ceramics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China
Jiangxi Guochuang Industrial Park Development Co. Ltd Ganzhou China
Institute of Electronic and Information Engineering of UESTC in Guangdong Dongguan China
Funding
Natural Science Foundation of Guangdong Province
References (27)
Show source-provided references
1. Sintering temperature dependence of grain boundary resistivity in a rare‐earth‐doped ZnO varistor10.1111/j.1551-2916.2006.01338.x ↗
2. Advances in the synthesis of ZnO nanomaterials for varistor devices10.1039/c3tc00575e ↗
3. Effect of MnO2 addition on microstructure and electrical properties of ZnO–V2O5‐based varistor ceramics10.1016/j.ceramint.2008.01.010 ↗
4. Microstructure and electrical characteristics of MnTa‐doped ZnO–V2O5‐ceramics with sintering10.1016/j.jallcom.2010.06.102 ↗
5. Effect of sintering temperature on microstructure and electrical properties of Zn·Pr·Co·Cr·La oxide‐based varistors10.1016/j.matlet.2006.06.015 ↗
6. Phase identification and electrical properties in zno‐glass varistors10.1111/j.1151-2916.1992.tb04236.x ↗
7. Grain growth control in Sb2O3‐doped zinc oxide10.1111/j.1151-2916.2003.tb03479.x ↗
8. Properties of Mn‐ and Co‐doped bulk ZnO crystals10.1116/1.1856476 ↗
9. Influence of Cr2O3 on ZnO–Bi2O3–MnO2‐based varistor ceramics10.1016/j.ceramint.2014.02.035 ↗
10. Influence of TiO2/Sb2O3 ratio on ZnO varistor ceramics10.1016/S0955-2219(01)00232-1 ↗
11. Tape casting and properties of Pr2O3‐doped ZnO multilayer varistors10.1108/MI-11-2013-0059 ↗
12. Degradation phenomena of multilayer ZnO–glass varistors studied by deep level transient spectroscopy10.1063/1.117493 ↗
13. Low‐temperature sintering and electrical properties of ZnO–Bi2O3–TiO2–Co2O3–MnCO3‐based varistor with Bi2O3–B2O3 frit for multilayer chip varistor applications10.1111/j.1551-2916.2010.03866.x ↗
14. Influence of processing parameters on the microstructure and electrical properties of multilayer‐chip ZnO varistors
15. Effect of dopant (Al, Nb, Bi, La) on varistor properties of ZnO–V2O5–MnO2–Co3O4–Dy2O3 ceramics10.1016/j.ceramint.2009.12.002 ↗
16. Influence of Mn doping on microstructure and DC‐accelerated aging behaviors of ZnO–V2O5‐based varistors10.1016/j.mseb.2008.02.018 ↗
17. Influence of La2O3 additives on microstructure and electrical properties of ZnO‐Pr6O11‐CoO‐Cr2O3‐La2O3‐based varistors10.1016/j.matlet.2005.01.080 ↗
18. Fabrication of high performance multilayer ZnO varistors with chemically synthesized doped zinc oxide powder10.4028/www.scientific.net/KEM.336-338.739 ↗
19. Preparation and electrical properties of multilayer ZnO varistors with water‐based tape casting10.1016/j.ceramint.2008.01.011 ↗
20. Synthesis of Bi2O3‐B2O3‐SiO2‐ZnO glass and their effects on the sintering temperature and magnetoelectric properties of Co/Ti doped M‐type barium ferrite10.4028/www.scientific.net/MSF.687.189 ↗
21. Influence of distribution of additives on electrical potential barrier at grain boundaries in ZnO‐based multilayered chip varistor10.1063/1.2358833 ↗
22. Microstructural and electrical properties of multicomponent varistor ceramics with PbO–ZnO–B2O3 glass addition10.1007/s10832-007-9023-8 ↗
23. Effects of Bi2O3–ZnO–B2O3–SiO2 glass addition on the sintering and microwave dielectric properties of ZnZrNb2O8 ceramics for LTCC applications
24. Direct synthesis of varistor‐grade doped nanocrystalline ZnO and its densification through a step‐sintering technique10.1016/j.actamat.2007.06.047 ↗
25. Relationship between microstructure and electrical properties of ZnO‐based multilayer varistor10.1143/JJAP.45.5126 ↗
26. Varistor ceramics10.1111/j.1151-2916.1999.tb01793.x ↗
27. Influence of Cr2O3 on highly nonlinear properties and low leakage current of ZnO–Bi2O3 varistor ceramics10.1016/j.ceramint.2016.03.042 ↗