Eliminating Voids at Al 2 O 3 –Cu Interface During Direct Bonding
Source abstract
Abstract
Direct bonding copper technique employs a eutectic liquid from C u– O system to bond copper to alumina. Many semispherical voids are found at the A l 2 O 3 – C u interface after bonding. Both the amount and the size of voids increase with the increase of oxygen content in copper. The void formation is resulted from the reduction of C u 2 O precipitates during bonding. Based on this observation, an approach to prevent the formation of voids is proposed. The approach introduces a sacrificial coating onto A l 2 O 3 substrate before bonding. The coating consumes the oxygen from the reduction, and the amount of voids is then reduced significantly.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Electronic and Structural Properties of Oxides · Semiconductor materials and devices · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering National Taiwan University Taipei 106 Taiwan
Funding
Ministry of Science and Technology, ROC
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