Optimization of Ti ₂ O ₃ thin films by magnetron sputtering and study of their photoelectric performance

Abstract In this study, Ti ₂ O ₃ thin films were successfully produced using magnetron sputtering. Through orthogonal gradient experiments, the impact of substrate temperature, sputtering vacuum, RF power, and sputtering duration on surface morphology, roughness, physical structure, and resistivity was investigated. Various analytical techniques were employed, including AFM and SEM for surface morphology observation, XRD and Raman for qualitative physical structure analysis, XPS for elemental valence examination, and the four‐probe method for resistivity measurements. The study identified optimal growth conditions for Ti ₂ O ₃ films, demonstrating a low resistivity of 2.66 × 10 ⁻³ Ω cm under the following conditions: RF power of 200 W, sputtering vacuum of .6 Pa, substrate temperature of 600°C, and sputtering duration of 60 min. Additionally, the sensor arrays were efficiently fabricated using the Lift‐off method to evaluate the photoelectric performance of the films. A light responsiveness of approximately 6 µA/W was observed in the device when illuminated with 950 nm light for 10 s. This finding carries important implications for the use of Ti ₂ O ₃ thin films in future photoelectric devices.