Magnetron Sputtered Ni ‐rich Nickel Oxide Nano‐Films for Resistive Switching Memory Applications
Source abstract
Abstract
Radio‐frequency magnetron sputtering has been used to deposit Ni ‐rich nickel oxide nano‐films to form a metal‐insulator‐metal structure, which exhibits resistive switching behavior. Memory characteristics of the structure have been investigated. The ratio of the current of the structure at the reading voltage of 0.05 V between a low‐resistance state ( LRS ) and a high‐resistance state ( HRS ) was observed to be >10 3 , showing a large memory window at a very low reading voltage. The memory window was well maintained within the time limit of the experiment (5 × 10 4 s), exhibiting good memory retention. The current transport at both the LRS and HRS has been studied, and the result suggests that the formation and annihilation of a conductive filament are responsible for the resistive switching.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · CCD and CMOS Imaging Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Electrical and Electronic Engineering Nanyang Technological University Singapore 639798 Singapore
State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 People's Republic of China
School of Mechanical and Aerospace Engineering Nanyang Technological University Singapore 639798 Singapore
References (27)
Show source-provided references
1. 10.1109/JPROC.2009.203514710.1109/JPROC.2009.2035147 ↗
2. 10.1126/science.115390910.1126/science.1153909 ↗
3. 10.1063/1.290370710.1063/1.2903707 ↗
4. 10.1063/1.313928210.1063/1.3139282 ↗
5. 10.1063/1.281869110.1063/1.2818691 ↗
6. 10.1109/LED.2009.203467010.1109/LED.2009.2034670 ↗
7. I. G.Baek et al. “Highly scalable non‐volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses ” 50th IEEE International Electron Devices Meeting San Francisco USA Dec 13–15 2004.
8. 10.1063/1.12690210.1063/1.126902 ↗
9. 10.1063/1.223621310.1063/1.2236213 ↗
10. 10.1007/s10832-007-9081-y10.1007/s10832-007-9081-y ↗
11. 10.1016/S1369-7021(08)70119-610.1016/S1369-7021(08)70119-6 ↗
12. 10.1038/nmat126910.1038/nmat1269 ↗
13. 10.1016/j.orgel.2006.03.01410.1016/j.orgel.2006.03.014 ↗
14. 10.1063/1.327117710.1063/1.3271177 ↗
15. 10.1063/1.140180410.1063/1.1401804 ↗
16. 10.1016/j.ijhydene.2009.02.03610.1016/j.ijhydene.2009.02.036 ↗
17. 10.1002/sia.164010.1002/sia.1640 ↗
18. 10.1021/nl803387q10.1021/nl803387q ↗
19. 10.1103/PhysRevB.67.03541910.1103/PhysRevB.67.035419 ↗
20. 10.1063/1.183156010.1063/1.1831560 ↗
21. 10.1073/pnas.071199010510.1073/pnas.0711990105 ↗
22. 10.1063/1.308102510.1063/1.3081025 ↗
23. 10.1063/1.347795310.1063/1.3477953 ↗
24. 10.1063/1.221008710.1063/1.2210087 ↗
25. 10.1002/adma.20070202410.1002/adma.200702024 ↗
26. 10.1063/1.283266010.1063/1.2832660 ↗
27. 10.1149/1.324020110.1149/1.3240201 ↗