Manganese‐Doped BiFeO 3 –BaTiO 3 High‐Temperature Piezoelectric Ceramics: Phase Structures and Defect Mechanism
Source abstract
Abstract
The bulk BiFeO 3 –BaTiO 3 system has been studied as a potential lead‐free high‐temperature piezoelectric material. It is found that the multivalency manganese‐doped 0.8BiFeO 3 –0.2BaTiO 3 ceramics exhibit the coexistence of tetragonal and rhombohedral phases, whereas Mn doping improves the resistivity and exhibits hard characteristic. The optimal properties were obtained at 0.12 wt% Mn addition exhibiting T c ˜ 637°C. The increase of T c in Mn‐modified compositions can be ascribed to the appearance of internal electric bias field by acceptor doping. The combination of good electrical properties and high T c makes these ceramics suitable for elevated temperature piezoelectric devices.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Multiferroics and related materials · Ferroelectric and Piezoelectric Materials · Dielectric properties of ceramics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing and School of Materials Science and Engineering Wuhan University of Technology Wuhan 430070 China
Funding
Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China
References (38)
Show source-provided references
1. 10.1016/j.progsolidstchem.2009.06.00110.1016/j.progsolidstchem.2009.06.001 ↗
2. 10.1016/0003-682X(94)90091-410.1016/0003-682X(94)90091-4 ↗
3. 10.1016/j.matlet.2005.06.01610.1016/j.matlet.2005.06.016 ↗
4. 10.1007/s10832-011-9639-610.1007/s10832-011-9639-6 ↗
5. 10.1016/j.jallcom.2013.11.16910.1016/j.jallcom.2013.11.169 ↗
6. 10.1111/j.1551-2916.2009.03313.x10.1111/j.1551-2916.2009.03313.x ↗
7. 10.1007/s10854-014-2260-010.1007/s10854-014-2260-0 ↗
8. 10.1007/s00339-007-4257-510.1007/s00339-007-4257-5 ↗
9. 10.1007/s00339-012-7194-x10.1007/s00339-012-7194-x ↗
10. 10.1007/s10948-013-2130-710.1007/s10948-013-2130-7 ↗
11. 10.1007/s00339-009-5297-910.1007/s00339-009-5297-9 ↗
12. 10.1007/s00339-010-5918-310.1007/s00339-010-5918-3 ↗
13. 10.1063/1.188177610.1063/1.1881776 ↗
14. 10.1063/1.162626710.1063/1.1626267 ↗
15. 10.1016/j.jeurceramsoc.2014.06.00910.1016/j.jeurceramsoc.2014.06.009 ↗
16. 10.1016/j.jeurceramsoc.2013.11.03910.1016/j.jeurceramsoc.2013.11.039 ↗
17. 10.1016/j.ceramint.2013.06.08810.1016/j.ceramint.2013.06.088 ↗
18. 10.1016/j.ceramint.2012.12.08710.1016/j.ceramint.2012.12.087 ↗
19. 10.1002/pssa.20122876010.1002/pssa.201228760 ↗
20. 10.1016/j.materresbull.2011.03.03410.1016/j.materresbull.2011.03.034 ↗
21. 10.1016/j.jallcom.2013.11.02910.1016/j.jallcom.2013.11.029 ↗
22. 10.1007/s10854-013-1346-410.1007/s10854-013-1346-4 ↗
23. 10.1143/JJAP.31.305810.1143/JJAP.31.3058 ↗
24. Shannon R. D. · Acta Cryst. · 1976 · 75110.1107/S0567739476001551 ↗
25. Isupov V. A. · Sov. Phys. Solid State · 1970 · 12 · 1084
26. 10.1016/j.ceramint.2013.09.02010.1016/j.ceramint.2013.09.020 ↗
27. 10.1016/j.materresbull.2012.09.02710.1016/j.materresbull.2012.09.027 ↗
28. 10.1016/j.ceramint.2007.09.02910.1016/j.ceramint.2007.09.029 ↗
29. 10.1088/0022-3727/38/8/00110.1088/0022-3727/38/8/001 ↗
30. Okazaki K. · Jpn J. Electrotechnol · 1962 · 7 · 13
31. 10.1143/JJAP.9.123610.1143/JJAP.9.1236 ↗
32. 10.1080/0015019820821061710.1080/00150198208210617 ↗
33. 10.1143/JJAP.10.64310.1143/JJAP.10.643 ↗
34. 10.1016/j.jcrysgro.2005.11.06510.1016/j.jcrysgro.2005.11.065 ↗
35. 10.1016/j.ceramint.2013.03.02310.1016/j.ceramint.2013.03.023 ↗
36. 10.1143/JJAP.20.9510.1143/JJAP.20.95 ↗
37. 10.1063/1.12690010.1063/1.126900 ↗
38. 10.1080/0015019780823677010.1080/00150197808236770 ↗