journal article·2010-07

Properties of Porous Si 3 N 4 /BN Composites Fabricated by RBSN Technique

Ji‐Xuan Liu, Bo Yuan, Guo‐Jun Zhang, Yan‐Mei Kan, Pei‐Ling Wang

Publisher page

Abstract

Reaction bonding of silicon nitride (RBSN) technique combined with slip‐casting shaping process was used to fabricate porous Si 3 N 4 /BN ceramic composites. Si/BN slurry with chemical stability, good dispersibility, and viscosity was prepared using glycerol trioleate (GTO) covering on Si surface and poly(acrylic acid) (PAA) as dispersant. The hydrolysis of Si was strongly prevented by GTO coating. The dispersibility of covered Si and BN suspensions were improved by PAA dispersant. Twenty volume percent covered Si/BN slurries with low viscosity were successfully casted. The cast bodies were dried at room temperature, debindered at 750°C and nitrided below 1450°C. The nitrided samples mainly consist of α‐Si 3 N 4 , β‐Si 3 N 4 , and h‐BN. The composites exhibit homogeneous microstructure consisting of faceted particles, α‐Si 3 N 4 nanowires and a large amount of pores. The porosity is 52.64% and the pore size is in the range of 60–300 nm. The composites show compressive strength of 16.6±1.5 MPa. The dielectric constant of the composite is about 3.1 and the dielectric loss is below 0.5% under different frequencies.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Advanced ceramic materials synthesis · MXene and MAX Phase Materials · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (40)

Show source-provided references
1. 10.1111/j.1744-7402.2005.02018.x10.1111/j.1744-7402.2005.02018.x ↗
2. 10.1016/S0955-2219(03)00607-110.1016/S0955-2219(03)00607-1 ↗
3. 10.1111/j.1151-2916.1981.tb09881.x10.1111/j.1151-2916.1981.tb09881.x ↗
4. Fabrication and Microstructure of Silicon Nitride/Boron Nitride Nanocomposites10.1111/j.1151-2916.2002.tb00514.x ↗
5. Machinability of Silicon Nitride/Boron Nitride Nanocomposites10.1111/j.1151-2916.2002.tb00515.x ↗
6. In Situ Si3N4–SiC–BN Composites
7. 10.1016/j.msea.2005.09.08510.1016/j.msea.2005.09.085 ↗
8. 10.1016/j.jeurceramsoc.2005.03.24410.1016/j.jeurceramsoc.2005.03.244 ↗
9. 10.1016/j.jeurceramsoc.2006.06.00810.1016/j.jeurceramsoc.2006.06.008 ↗
10. 10.1006/jcat.2001.326310.1006/jcat.2001.3263 ↗
11. 10.4028/www.scientific.net/KEM.336-338.30710.4028/www.scientific.net/KEM.336-338.307 ↗
12. Reaction‐Bonded Silicon Nitride
13. 10.1007/3-540-45623-6_210.1007/3-540-45623-6_2 ↗
14. Silicon Nitride and Related Materials10.1111/j.1151-2916.2000.tb01182.x ↗
15. Slip Casting of Metals, Ceramics, and Cermets
16. Aqueous Processing of Sintered Reaction‐Bonded Silicon Nitride
17. Slip Casting of Silicon Shapes and Their Nitriding
18. 10.1016/S0955-2219(89)80003-210.1016/S0955-2219(89)80003-2 ↗
19. Properties of Silicon Suspensions and Cast Bodies
20. 10.1111/j.1151-2916.2003.tb03632.x10.1111/j.1151-2916.2003.tb03632.x ↗
21. 10.1016/S1359-6454(02)00350-610.1016/S1359-6454(02)00350-6 ↗
22. 10.1016/j.matlet.2006.08.06710.1016/j.matlet.2006.08.067 ↗
23. Clayden J. · 2000 · 1374
24. Xu W. L. · 2002 · 271
25. 10.1007/BF0240341710.1007/BF02403417 ↗
26. 10.1557/JMR.2002.005410.1557/JMR.2002.0054 ↗
27. Properties of Si3N4 Produced by Nitriding Slip‐Cast Si Containing Si3N4 Grog Additions10.1111/j.1151-2916.1984.tb18830.x ↗
28. 10.1021/nl072974w10.1021/nl072974w ↗
29. 10.1063/1.165529710.1063/1.1655297 ↗
30. 10.1111/j.1151-2916.1997.tb03203.x10.1111/j.1151-2916.1997.tb03203.x ↗
31. 10.1111/j.1151-2916.1984.tb19684.x10.1111/j.1151-2916.1984.tb19684.x ↗
32. Carbothermal Synthesis of Silicon Nitride
33. 10.1007/BF0240335910.1007/BF02403359 ↗
34. 10.1111/j.1551-2916.2005.00444.x10.1111/j.1551-2916.2005.00444.x ↗
35. 10.1016/j.scriptamat.2006.10.01210.1016/j.scriptamat.2006.10.012 ↗
36. M. Y.HsiehandH.Mizuhara “Silicon Nitride Having Low Dielectric Constant ” U.S. Patent No.906879 1986–09–15
37. 10.1016/j.jeurceramsoc.2006.08.01510.1016/j.jeurceramsoc.2006.08.015 ↗
38. 10.1111/j.1744-7402.2008.02197.x10.1111/j.1744-7402.2008.02197.x ↗
39. Reaction Sintered Silicon Nitride for High Temperature Radome Applications
40. Kingery W. D. · 1976 · 950