Realization of high transparent mobility zinc‐doped indium oxide (IZO) thin films by RF‐magnetron sputtering
Source abstract
Abstract
Abstract Zinc‐doped indium oxide (IZO) thin films were deposited on silicon dioxide substrates by radio‐frequency magnetron sputtering using an IZO ceramic target with In 2 O 3 /ZnO weight ratio of 9:1. The effects of power, pressure, and distance between target and substrate on microstructure and photoelectric properties of IZO films were investigated. The results show the performance of IZO films prepared under the conditions of power 80 W, air pressure .5 Pa, and target base distance 80 mm are the best, and the IZO films are amorphous with high transmittance (>86.0%), high mobility (>45.0 cm 2 /V s), and low resistivity (less than 2.0 × 10 −4 Ω cm), which are the best photoelectric performance reported at present. This work provides a feasible research approach for preparing high‐performance IZO thin films.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · Thin-Film Transistor Technologies · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Materials Science and Engineering Zhengzhou University Zhengzhou China
Critical Metals Henan Laboratory Zhengzhou University Zhengzhou China
Zhongyuan Critical Metals Laboratory Zhengzhou China
Funding
National Key Research and Development Program of China · Startup Research Fund of Zhengzhou University
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