Microstructure and lattice strain of Mn-, Zn-, and Cd-doped InSb studied by X-ray diffraction
Source abstract
Abstract
We have studied the microstructure of quenched samples of polycrystalline undoped InSb and materials doped and codoped with Mn, Zn, and Cd. Using X-ray diffraction profile analysis and the Williamson–Hall method, we evaluated the average lattice strain and the lattice strain in various crystallographic directions in the samples. The results demonstrate that the lattice strain in polished sections and powders depends on both the nature of the cation (its size) and doping level. The more complex lattice strain distribution in polished sections suggests that the dislocations generated there play an important role.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · GaN-based semiconductor devices and materials
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References (14)
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