Thermoelectric properties of a eutectic SnSe2-Bi2Se3 alloy
Source abstract
Abstract
Data are presented which confirm that the SnSe2-Bi2Se3 system has a eutectic phase diagram, with a eutectic at 67 mol % SnSe2, melting at 831 ± 5 K. The thermoelectric properties of the eutectic alloy in this system have been studied for the first time in the temperature range 300–600 K. The results demonstrate that this alloy is a promising low-temperature thermoelectric material: its minimal thermal conductivity (χmin) and maximum thermoelectric figure of merit (ZT max) are 0.28 W/(m K) (416 K) and 0.56 (593 K), respectively.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Phase-change materials and chalcogenides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (20)
Show source-provided references
1. Shevel’kov, A.V., Chemical aspects of designing thermoelectric materials, Usp. Khim., 2008, vol. 77, no. 1, pp. 3–21.
2. Eremina, A.F., Tagirov, V.I., Aliev, S.A., and Shakhtakhtinskii, M.G., Thermal conductivity of the GaSb-Ge system, Phys. Status Solidi A, 1970, vol. 3, no. 1, pp. 33–36.10.1002/pssa.19700030104 ↗
3. Kozma, A.A., Peresh, E.Yu., Barchiy, I.E., Sabov, M.Yu., Betsa, V.V., and Tsygyka, V.V., Thermoelectric properties of eutectic TlBiSe2-SnSe2 (Tl2SnSe3, Tl4SnSe4) and Tl4SnSe4-Tl9BiSe6 alloys, Ukr. Khim. Zh., 2011, vol. 77, no. 9, pp. 23–26.
4. Leonov, V.V. and Spektor, Yu.E., Thermoelectric properties of a eutectic Ge-GaAs alloy, Izv. Akad. Nauk SSSR, Neorg. Mater., 1980, vol. 16, no. 8, pp. 1358–1360.
5. Chizhevskaya, S.N., Shelimova, L.E., and Zaitseva, I.A., Critical analysis and matching of data on the phase diagram of the Bi-Se system, Inorg. Mater., 1994, vol. 30, no. 11, pp. 1285–1292.
6. Kyung-Min Chung, Wamwangi, D., Woda, M., Wuttig, M., and Bensch, W., Investigation of SnSe, SnSe2 and Sn2Se3 alloys for phase change memory applications, J. Appl. Phys., 2008, vol. 103, no. 8, paper 083 523.
7. Sher, A.A., Odin, I.N., and Novoselova, A.V., Influence of Cd, Sn and their selenides on the thermoelectric properties of bismuth selenides, Izv. Akad. Nauk SSSR, Neorg. Mater., 1984, vol. 20, no. 8, pp. 1287–1290.
8. Nasibov, I.O., Sultanov, T.I., Rustamov, P.G., and Alidzhanov, M.A., Physical properties of solid-solution alloys in the system Ce2Se3-SnSe2, Izv. Akad. Nauk SSSR, Neorg. Mater., 1977, vol. 13, no. 6, pp. 982–985.
9. Sher, A.A., Odin, I.N., and Novoselova, A.V., Phase relations in the system Sn-Bi-Se, Izv. Akad. Nauk SSSR, Neorg. Mater., 1978, vol. 14, no. 7, pp. 1270–1276.
10. Egunov, V.P., Vvedenie v termicheskii analiz (Introduction to Thermal Analysis), Samara: SamVen, 1996.
11. Kovba, L.M., Rentgenografiya v neorganicheskoi khimii (X-Ray Diffraction in Inorganic Chemistry), Moscow: Mosk. Gos. Univ., 1991.
12. Nolze, G. and Kraus, W., Powdercell 2.0 for Windows, Powder Diffr., 1998, vol. 13, no. 4, pp. 255–259.10.1017/S0885715600020844 ↗
13. Harman T.C., Cahn, J.H., and Logan, M.J., Measurement of thermal conductivity by utilization of the Peltier effect, J. Appl. Phys., 1959, vol. 30, no. 9, pp. 1351–1359.10.1063/1.1735334 ↗
14. Goldsmid, H.J., Direct thermoelectric figure of merit measurement experiments, Termoelektrichestvo, 2006, no. 1, pp. 5–15.
15. Ioffe, A.F., Poluprovodnikovye termoelementy (Semiconductor Thermoelements), Moscow: Fizmatgiz, 1956.
16. Yamanaka, S., Kurosaki, K., Kosuga, A., Goto, K., and Muta, H., Extremely low thermal conductivity substances as novel thermoelectric materials, MRS Proc., 2005, vol. 886, paper 0886-F09-05.10.1557/PROC-0886-F09-05 ↗
17. Cham Kim, Dong Hwan Kim, Yoo Soo Han, Jong Shik Chung, Sang Ha Park, and Hogoung Kim, Fabrication of bismuth telluride nanoparticles using a chemical synthetic process and their thermoelectric evaluations, Powder Technol., 2011, vol. 214, no. 3, pp. 463–468.10.1016/j.powtec.2011.08.049 ↗
18. Yan-Ling Pei and Yong Liu, Electrical and thermal transport properties of Pb_based chalcogenides: PbTe, PbSe, and PbS, J. Alloys Compd., 2012, vol. 514, pp. 40–44.10.1016/j.jallcom.2011.10.036 ↗
19. Gol’tsman, B.M., Sarkisyan, V.Sh., Stil’bans, L.S., and Shlykov, V.V., Influence of pores and grain boundaries on the electrical and thermal conductivity of thermoelectric materials, Izv. Akad. Nauk SSSR, Neorg. Mater., 1969, vol. 5, no. 2, pp. 283–286.
20. Kozma, A.A., Barchiy, I.E., Peresh, E.Yu., Sabov, M.Yu., Betsa, V.V., and Tsygyka, V.V., Ukr. Patent 98368, Byull. Izobret., 2012, no. 9.