A Novel Design and Modeling Paradigm for Memristor-Based Crossbar Circuits
Source abstract
Abstract
Over 30 years ago L. Chua proposed the existence of a new class of passive circuit elements, which he called memristors and memristive devices. The unique electrical characteristics associated with them, along with the advantages of crossbar structures, have the potential to revolutionize computing architectures. A well-defined and effective memristor model for circuit design combined with a design paradigm based on well-understood underlying logic design principles would certainly accelerate research on nanoscale circuits and systems. Toward this goal, we propose a memristor crossbar circuit design paradigm in which memristors are modeled using the quantum mechanical phenomenon of tunneling. We use this circuit model to design and simulate various logic circuit designs capable of universal computation. Finally, we develop and present a new design paradigm for memristor-based crossbar circuits.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Quantum-Dot Cellular Automata
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (43)
Show source-provided references
1. 10.1073/pnas.080664210610.1073/pnas.0806642106 ↗
2. Memristor-CMOS hybrid integrated circuits for reconfigurable logic10.1021/nl901874j ↗
3. 10.1007/s00339-011-6331-210.1007/s00339-011-6331-2 ↗
4. 10.1109/TNANO.2009.203861010.1109/TNANO.2009.2038610 ↗
5. 10.1109/TCSI.2009.203853910.1109/TCSI.2009.2038539 ↗
6. 10.1109/PROC.1976.1009210.1109/PROC.1976.10092 ↗
7. 10.1038/nature0974910.1038/nature09749 ↗
8. 10.1109/TNANO.2003.82080410.1109/TNANO.2003.820804 ↗
9. 10.1109/TNANO.2009.203805110.1109/TNANO.2009.2038051 ↗
10. 10.1063/1.294527810.1063/1.2945278 ↗
11. 0
12. 10.1063/1.323650610.1063/1.3236506 ↗
13. 10.1109/JPROC.2003.81832710.1109/JPROC.2003.818327 ↗
14. 0
15. Programmable resistance switching in nanoscale two-terminal devices10.1021/nl803669s ↗
16. 10.1021/nl203687n10.1021/nl203687n ↗
17. 10.1109/ASPDAC.2011.572218710.1109/ASPDAC.2011.5722187 ↗
18. Excellent resistive switching memory: Influence of GeO $x$ in WO$x$ mixture
19. 10.1109/LED.2012.219667210.1109/LED.2012.2196672 ↗
20. 10.1109/TED.2011.214779110.1109/TED.2011.2147791 ↗
21. 10.1109/TED.2011.216251810.1109/TED.2011.2162518 ↗
22. 10.1007/s00339-008-4975-310.1007/s00339-008-4975-3 ↗
23. A defect-tolerant computer architecture: Opportunities for nanotechnology10.1126/science.280.5370.1716 ↗
24. 10.1002/smll.20080132310.1002/smll.200801323 ↗
25. 10.1038/nature0693210.1038/nature06932 ↗
26. 10.1088/0957-4484/18/3/03520410.1088/0957-4484/18/3/035204 ↗
27. 10.1109/JPROC.2009.202107710.1109/JPROC.2009.2021077 ↗
28. 10.1088/0957-4484/15/8/00310.1088/0957-4484/15/8/003 ↗
29. 10.1002/adma.20090082210.1002/adma.200900822 ↗
30. 10.1088/0957-4484/16/6/04510.1088/0957-4484/16/6/045 ↗
31. 10.1109/MSPEC.2008.468736610.1109/MSPEC.2008.4687366 ↗
32. schiff · Quantum mechanics (International Series in Pure and Applied Physics) · 1968 · 100
33. 10.1109/TCT.1971.108333710.1109/TCT.1971.1083337 ↗
34. 10.1109/JPROC.2012.219036910.1109/JPROC.2012.2190369 ↗
35. 10.1109/TVLSI.2010.204986710.1109/TVLSI.2010.2049867 ↗
36. 10.1109/TNANO.2011.216680510.1109/TNANO.2011.2166805 ↗
37. 10.1109/TVLSI.2008.200230310.1109/TVLSI.2008.2002303 ↗
38. 10.1088/0957-4484/20/42/42520410.1088/0957-4484/20/42/425204 ↗
39. 10.1109/TNANO.2011.217480210.1109/TNANO.2011.2174802 ↗
40. 10.1073/pnas.090694910610.1073/pnas.0906949106 ↗
41. 10.1088/0143-0807/30/4/00110.1088/0143-0807/30/4/001 ↗
42. 10.1109/TCSI.2010.207871010.1109/TCSI.2010.2078710 ↗
43. 0