journal article·2017-02

Compatibility of Lead-Bismuth Eutectic with SiC-Coated Graphite at Elevated Temperature

Poulami Chakraborty, Abhijit Ghosh, Gautam Kumar Dey

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Abstract

Uniform coating of β-silicon carbide (β-SiC) was formed over a graphite pellet through slurry-based silicon coating followed by in situ reaction at 1873 K (1600 °C). The coated pellet was exposed to molten lead-bismuth eutectic (LBE) at 1173 K (900 °C) in static condition for 200 h. Weight loss measurement, X-ray diffraction, and secondary electron microscopy–energy-dispersive spectroscopy confirmed that the SiC coating could effectively prevent molten LBE from attacking the inner graphite material.
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Research context

OpenAlex topics: Advanced ceramic materials synthesis · Silicon Carbide Semiconductor Technologies · Silicon and Solar Cell Technologies

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