Numerical Simulation of Species Segregation and 2D Distribution in the Floating Zone Silicon Crystals
Source abstract
Abstract
The distribution of dopants and impurities in silicon grown with the floating zone method determines the electrical resistivity and other important properties of the crystals. A crucial process that defines the transport of these species is the segregation at the crystallization interface. To investigate the influence of the melt flow on the effective segregation coefficient as well as on the global species transport and the resulting distribution in the grown crystal, we developed a new coupled numerical model. Our simulation results include the shape of phase boundaries, melt flow velocity and temperature, species distribution in the melt and, finally, the radial and axial distributions in the grown crystal. We concluded that the effective segregation coefficient is not constant during the growth process but rather increases for larger melt diameters due to less intensive melt mixing.
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Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Thin-Film Transistor Technologies · Solidification and crystal growth phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Numerical Modelling, University of Latvia, Jelgavas Street 3, LV-1004 Riga, Latvia
Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany
Funding
University of Latvia, “Strengthening of the capacity of doctoral studies at the University of Latvia within the framework of the new doctoral model” · European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation programme
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