journal article·2011-12-07

Formation of Inert Bi2Se3(0001) Cleaved Surface

V. V. Atuchin, V. A. Golyashov, K. A. Kokh, I. V. Korolkov, A. S. Kozhukhov, V. N. Kruchinin, S. V. Makarenko, L. D. Pokrovsky, I. P. Prosvirin, K. N. Romanyuk, O. E. Tereshchenko

Crystal Growth & Design· Volume 11· Issue 12
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Abstract

A high quality inclusion-free Bi 2 Se 3 crystal has been grown by the Bridgman method with the use of a rotating heat field. A large-area atomically flat Bi 2 Se 3 (0001) surface of excellent crystallographic quality has been formed by cleavage. Chemical and microstructural properties of the surface have been evaluated with reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning tunneling microscopy (STM), spectroscopic ellipsometry, and X-ray photoelectron spectroscopy. There was no Bi 2 Se 3 (0001) surface oxidation detected after over a month in air under ambient conditions as shown by comparative core level spectroscopy, AFM, and STM.
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Research context

OpenAlex topics: Topological Materials and Phenomena · Advanced Thermoelectric Materials and Devices · Quantum, superfluid, helium dynamics

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia

Department of Physics, Novosibirsk State University, Novosibirsk 630090, Russia

Laboratory of Crystal Growth, Institute of Geology and Mineralogy, SB RAS, Novosibirsk 630090, Russia

Laboratory of Crystal Chemistry, Institute of Inorganic Chemistry, SB RAS, Novosibirsk 630090, Russia

Laboratory of Nanodiagnostics and Nanolithography, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia

Laboratory for Ellipsometry of Semiconductor Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia

Boreskov Institute of Catalysis, SB RAS, Novosibirsk 630090, Russia

Laboratory of Molecular Beam Epitaxy of III-V Semiconductors, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia

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