journal article·2011-06-01

Structural and Electronic Properties of ZnWO4(010) Cleaved Surface

Victor V. Atuchin, Evgeny N. Galashov, Oleg Yu. Khyzhun, Anton S. Kozhukhov, Lel D. Pokrovsky, Vladimir N. Shlegel

Crystal Growth & Design· Volume 11· Issue 6
Publisher page

Abstract

A high-quality inclusion-free ZnWO 4 crystal 90 mm in diameter and with a mass of up to 8 kg was grown by the low thermal gradient Czochralski technique. Crystallographic properties of ZnWO 4 (010) cleaved surfaces were evaluated with reflection high energy electron diffraction (RHEED), and the electronic structure of the surface was studied using X-ray photoelectron spectroscopy (XPS). A system of Kikuchi lines was observed for cleaved ZnWO 4 (010) by RHEED confirming the high crystallographic state of the surface. The XPS valence-band and core-level spectra of ZnWO 4 (010) have been measured. The XPS measurements reveal that tungsten and zinc atoms are in the formal valences +6 and +2, respectively, on cleaved ZnWO 4 (010) surface. The 3.0 keV Ar + bombardment of the surface causes partial transformation of tungsten ions from W 6+ to lower valence states; however, no partial loss of oxygen atoms belonging to ZnO 6 octahedra occurs due to this bombardment of the ZnWO 4 (010) surface because after this treatment zinc remains exclusively in the formal valence +2. The W–O chemical bonding is considered in tungstates including ZnWO 4 .
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Luminescence Properties of Advanced Materials · Microwave Dielectric Ceramics Synthesis · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Science, Novosibirsk 90, 630090, Russia

Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, Novosibirsk 90, 630090, Russia

Frantsevich Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3 Krzhyzhanivsky Street, Kiev UA-03142, Ukraine

Laboratory of Nanodiagnostics and Nanolithography, Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk 90, 630090, Russia

Physical Department, Novosibirsk State University, Novosibirsk 90, 630090, Russia

References (55)

Show source-provided references
1. Liao H.-W. · Chem. Mater. · 2000 · 12 · 281910.1021/cm000096w ↗
2. Kloprogge J. T. · Mater. Chem. Phys. · 2004 · 88 · 43810.1016/j.matchemphys.2004.08.013 ↗
3. Tong W. · J. Phys. Chem. C · 2010 · 114 · 151210.1021/jp910284u ↗
4. Rajagopal S. · J. Alloys Compd. · 2010 · 493 · 34010.1016/j.jallcom.2009.12.099 ↗
5. Pisarevskii Yu. V. · Phys. Status Solidi A · 1988 · 107 · 16110.1002/pssa.2211070115 ↗
6. Wang H. · Phys. Rev. B · 1992 · 45 · 1035610.1103/PhysRevB.45.10356 ↗
7. Galashov E. N. · Funct. Mater. · 2009 · 16 · 63
8. Galashov E. N. · Cryst. Rep. · 2009 · 54 · 68910.1134/S1063774509040245 ↗
9. Bi J. · J. Alloys Compd. · 2009 · 480 · 68410.1016/j.jallcom.2009.02.029 ↗
10. Yu C. · Mater. Sci. Eng., B · 2009 · 164 · 1610.1016/j.mseb.2009.06.008 ↗
11. Zhao X. · Catal. Commun. · 2010 · 12 · 7610.1016/j.catcom.2010.08.013 ↗
12. Chen S. · J. Phys. Chem. C · 2010 · 114 · 768010.1021/jp911952v ↗
13. Kaminskii A. A. · Appl. Opt. · 1999 · 38 · 453310.1364/AO.38.004533 ↗
14. Eichler H. J. · J. Zhejiang Univ. Sci. · 2003 · 4 · 24110.1631/jzus.2003.0241 ↗
15. Danevich F. A. · Nucl. Instrum. Meth. Phys. Res. A · 2009 · 608 · 10710.1016/j.nima.2009.06.040 ↗
16. Dubovik A. M. · Acta Phys. Pol., A · 2010 · 117 · 1510.12693/APhysPolA.117.15 ↗
17. Belli P. · Acta Phys. Pol., A · 2010 · 117 · 13910.12693/APhysPolA.117.139 ↗
18. Belli P. · Nucl. Instrum. Meth. Phys. Res. A · 2010 · 615 · 30110.1016/j.nima.2010.01.081 ↗
19. Trots D. M. · J. Phys.: Condens. Matter · 2009 · 21 · 325402
20. Itoh M. · J. Phys. Soc. Jpn. · 2006 · 75 · 08470510.1143/JPSJ.75.084705 ↗
21. Kalinko A. · Solid State Commun. · 2009 · 149 · 42510.1016/j.ssc.2009.01.003 ↗
22. Zhao X. · Environ. Sci. Technol. · 2006 · 40 · 336710.1021/es052029e ↗
23. Moulder J. F. · 1992
24. Briggs D · 1990 · 1 · 635
25. Khyzhun O. Yu. · J. Alloys Compd. · 2000 · 305 · 110.1016/S0925-8388(00)00697-6 ↗
26. Atuchin V. V. · Surf. Rev. Lett. · 2004 · 11 · 19110.1142/S0218625X04006013 ↗
27. Atuchin V. V. · J. Electron Spectrosc. Relat. Phenom. · 2005 · 142 · 12910.1016/j.elspec.2004.10.003 ↗
28. Atuchin V. V. · J. Electron Spectrosc. Relat. Phenom. · 2006 · 152 · 1810.1016/j.elspec.2006.02.004 ↗
29. Atuchin V. V. · Eur. Phys. J. B · 2006 · 51 · 29310.1140/epjb/e2006-00208-8 ↗
30. Atuchin V. V. · J. Solid State Chem. · 2006 · 179 · 234910.1016/j.jssc.2006.04.025 ↗
31. Ramana C. V. · Appl. Surf. Sci. · 2007 · 253 · 536810.1016/j.apsusc.2006.12.012 ↗
32. Ramana C. V. · J. Phys. Chem. C · 2007 · 111 · 270210.1021/jp0671392 ↗
33. Atuchin V. V. · Surf. Rev. Lett. · 2008 · 15 · 39110.1142/S0218625X08011512 ↗
34. Atuchin V. V. · Chem. Phys. · 2009 · 360 · 7410.1016/j.chemphys.2009.04.010 ↗
35. Weitzel H. · Z. Kristallogr. · 1976 · 144 · 23810.1524/zkri.1976.144.1-6.238 ↗
36. Schofield P. F. · Acta Crystallogr. B · 1997 · 53 · 10210.1107/S0108768196010403 ↗
37. Jeitschko W. · Acta Crystallogr. B · 1974 · 30 · 208810.1107/S0567740874006534 ↗
38. Ulku D. · Z. Kristallogr. · 1967 · 124 · 19210.1524/zkri.1967.124.3.192 ↗
39. Hazen R. M. · J. Phys. Chem. Solids · 1985 · 46 · 25310.1016/0022-3697(85)90039-3 ↗
40. Gürmen E. · J. Chem. Phys. · 1971 · 55 · 109310.1063/1.1676191 ↗
41. Moreau J. M. · J. Alloys Compd. · 1996 · 238 · 4610.1016/0925-8388(95)02175-2 ↗
42. Pujol M · J. Appl. Phys. · 2001 · 34 · 1
43. Gallucci E. · J. Cryst. Growth · 2000 · 209 · 89510.1016/S0022-0248(99)00623-5 ↗
44. Ng K. T. · J. Phys. Chem. · 1976 · 80 · 209410.1021/j100560a009 ↗
45. Khyzhun O. Yu. · J. Alloys Compd. · 2005 · 389 · 1410.1016/j.jallcom.2004.08.013 ↗
46. Dong H. · Sens. Actuat. B · 2009 · 140 · 62310.1016/j.snb.2009.05.010 ↗
47. Zhou Y.-X. · Inorg. Chem. · 2009 · 48 · 108210.1021/ic801806r ↗
48. Wang W. · J. Nanopart. Res. · 2010 · 12 · 229510.1007/s11051-010-9850-4 ↗
49. Nefedov V. I. · J. Electron Spectrosc. Relat. Phenom. · 1982 · 25 · 2910.1016/0368-2048(82)85002-0 ↗
50. Chen L. · Mater. Res. Bull. · 2007 · 42 · 182310.1016/j.materresbull.2006.12.002 ↗
51. Charton P. · J. Solid State Chem. · 2002 · 168 · 17510.1006/jssc.2002.9707 ↗
52. Atuchin V. V. · Solid State Commun. · 2005 · 133 · 34710.1016/j.ssc.2004.11.042 ↗
53. Atuchin V. V. · J. Appl. Phys. · 2008 · 104 · 03351810.1063/1.2963957 ↗
54. Khyzhun O. Yu. · J. Alloys Compd. · 2001 · 320 · 110.1016/S0925-8388(00)01454-7 ↗
55. Solonin Yu. M. · Cryst. Growth Des. · 2001 · 1 · 47310.1021/cg015545z ↗