Critical review of electrical transport properties of p -type CuInSe 2 and CuGaSe 2
Source abstract
Abstract
The electrical transport data on p-type samples of CuInSe2 and CuGaSe2 are restudied taking into account the effects of the non-parabolicity of the valence band and hopping conduction in the acceptor band to identify hopping conduction mechanisms in each of the samples. The significant effects of hopping conduction are revealed not only for the electrical conductivity and the Hall coefficient but also for the Seebeck coefficient. It is revealed that the primitive two-band model used in the previous studies is apt to overestimate the impurity concentrations. The non-parabolicity is found to be much larger in CuGaSe2 than in CuInSe2.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Copper-based nanomaterials and applications · Advanced Thermoelectric Materials and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Interdisciplinary Faculty of Science and Engineering, Shimane University
References (100+)
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