journal article·2026-08Open access

High temperature oxidation of Cr-Al-O-N thin films: Complex interplay of oxide scale formation and kinetically limited decomposition

Pauline Kümmerl, Devi Janani Ramesh, Felix Leinenbach, Ganesh Kumar Nayak, Daniel Primetzhofer, Szilárd Kolozsvári, Peter Polcik, Jochen M. Schneider, Marcus Hans

Corrosion Science· Volume 269

Abstract

The oxidation behavior of (Cr 0.47±0.03 Al 0.53±0.03 ) z (O y N 1- y ) 1-z thin films (z = 0.475 ± 0.015) was investigated as a function of the O concentration with y = 0, 0.15, and 0.40 at 1000 °C to 1200 °C. Three regions were identified after oxidation at 1000 °C and 1100 °C: an Al-rich oxide scale (I) with a Cr-rich oxynitride gradient interlayer (II) is formed, and O levels decrease linearly within the interlayer towards the remaining film (III). Increasing the O concentration in the film reduces the amount of Cr in the oxide scale and significantly increases the stability of the remaining film during oxidation, which can be readily understood by O-induced enhancement of the activation energy of migration. Non-metal mobility is required for the decomposition of (Cr,Al)(O,N) into hexagonal Cr 2 N, and the formation of O vacancies is inhibited due to their high vacancy formation energy. All film compositions show a passivating oxidation behavior with comparable oxide scale thickness (I) of ~130 ± 30 nm after oxidation at 1000 °C for 16 h. In contrast, at 1100 °C, (Cr 0.48 Al 0.52 ) 0.48 (O 0.15 N 0.85 ) 0.52 exhibits the thinnest combination of oxide scale and oxynitride interlayer thickness (I+II), while it is 27% and 42% thicker for (Cr 0.50 Al 0.50 ) 0.49 N 0.51 and (Cr 0.44 Al 0.56 ) 0.46 (O 0.40 N 0.60 ) 0.54 , respectively. Oxidation kinetics are reduced for the oxynitride films, however, cracks are formed at the interlayer of (Cr 0.44 Al 0.56 ) 0.46 (O 0.40 N 0.60 ) 0.54 , eventually causing delamination. Consequently, (Cr 0.48 Al 0.52 ) 0.48 (O 0.15 N 0.85 ) 0.52 offers the highest oxidation resistance while exhibiting lower oxidation kinetics than Cr 2 AlC at 1100 °C. • Formation of Al-rich oxide scale and oxynitride gradient interlayer • O incorporation reduces the amount of Cr in the oxide scale • O incorporation increases the stability of the remaining film by enhancing the activation energy of migration • At 1000 °C, passivating oxidation behavior is observed • At 1100 °C, (Cr 0.48 Al 0.52 ) 0.48 (O 0.15 N 0.85 ) 0.52 offers lower oxidation kinetics than Cr 2 AlC
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OpenAlex topics: Metal and Thin Film Mechanics · Advanced ceramic materials synthesis · Semiconductor materials and devices

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