Anodic oxides on InAlP formed in sodium tungstate electrolyte
Source abstract
Abstract
Amorphous anodic oxide films on InAlP have been grown at high efficiency in sodium tungstate electrolyte. The films are shown to comprise an outer layer containing indium species, an intermediate layer containing indium and aluminium species and an inner layer containing indium, aluminium and phosphorus species. The layering correlates with the influence on cation migration rates of the energies of In3+–O, Al3+–O and P5+–O bonds, which increase in this order. The film surface becomes increasingly rough with increase of the anodizing voltage as pores develop in the film, which appear to be associated with generation of oxygen gas.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and devices · Anodic Oxide Films and Nanostructures · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (24)
Show source-provided references
1. Oxidation of III–V semiconductors10.1016/j.corsci.2006.05.004 ↗
2. A high resolution, analytical study of the anodic film formed on GaAs in tungstate electrolyte10.1088/0022-3727/29/10/004 ↗
3. Anodic film growth on InP in sodium tungstate10.1016/S0010-938X(01)00186-X ↗
4. Direct observation of the anodic films formed on gallium phosphide in aqueous tungstate electrolyte10.1149/1.1838756 ↗
5. The formation of anodic oxides on InAs at high efficiency in sodium tungstate electrolyte10.1016/S0040-6090(00)00968-8 ↗
6. Anodic oxidation of GaSb in acid-glycol-water electrolytes10.1149/1.1393456 ↗
7. Controlled anodic oxidation for high precision etch depth in AlGaAs III-V semiconductor structures10.1149/1.1838392 ↗
8. Anodizing of AlxGa1-xAs in tungstate electrolyte10.1016/S0010-938X(00)00030-5 ↗
9. Depth profiling of MBE GaInAs and detection of the GaInAs-InP interface using anodic oxidation10.1149/1.2108454 ↗
10. Anodic oxidation of InAlAs10.1016/j.corsci.2004.11.026 ↗
11. Role of oxygen bubble generation in anodic film growth on InP10.1016/S0010-938X(01)00007-5 ↗
12. Barrier and porous anodic oxides on InSb10.1016/j.corsci.2008.01.009 ↗
13. Diffusion barrier layers for Al on GaAs native oxide grown by liquid phase chemical-enhanced oxidation10.1016/j.sse.2007.09.003 ↗
14. Varied morphology of porous GaP(111) formed by anodization10.1016/j.jallcom.2006.12.097 ↗
15. Pore initiation and growth on n-InP(1 0 0)10.1016/S0013-4686(02)00839-3 ↗
16. Gel formation and the efficiency of anodic film growth on aluminium10.1016/S0013-4686(98)00363-6 ↗
17. TeO2–WO3 glasses: infrared, XPS and XANES structural characterizations10.1006/jssc.2002.9707 ↗
18. Synthesis, characterization and electrochemical studies of Ti-incorporated tungsten trioxides as platinum support for methanol oxidation10.1016/j.jpowsour.2004.11.033 ↗
19. The anodic oxidation of superimposed metallic layers: theory10.1016/0013-4686(80)87157-X ↗
20. Morphology and composition of layered anodic films on InP10.1023/A:1004854514323 ↗
21. Anodic oxide film on antimony: II. Parameters of film growth and dissolution kinetics in neutral and alkaline media10.1016/S0022-0728(72)80511-4 ↗
22. Thin indium oxide film formation and growth: impedance spectroscopy and cyclic voltammetry investigations10.1016/S0022-0728(98)00274-5 ↗
23. Evidence of oxygen bubbles formed within anodic films on aluminium-copper alloys10.1080/01418619708214206 ↗
24. Crystallization of anodic titania on titanium and its alloys10.1016/S0010-938X(03)00040-4 ↗