The effects of Cl2 on the oxidation of single crystal silicon carbide
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OpenAlex topics: Advanced ceramic materials synthesis · Semiconductor materials and devices · Silicon Carbide Semiconductor Technologies
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References (24)
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1. Role of chlorine in silicon oxidation
2. Role of chlorine in silicon oxidation
3. Microstructure development during thermal oxidation of silicon in chlorine containing ambients10.1016/0022-3093(82)90119-3 ↗
4. Phase separation and sodium passivation in silicon oxides grown in HCl/O2 ambients10.1149/1.2129231 ↗
5. The effect of HCl and Cl2 on the thermal oxidation of silicon10.1149/1.2404208 ↗
6. Oxidation of silicon in the presence of chlorine and chlorine compounds10.1149/1.2131472 ↗
7. Chlorine incorporation in HCl oxides10.1149/1.2128971 ↗
8. Kinetics of the thermal oxidation of silicon in O2/H2O and O2/Cl2 mixtures10.1149/1.2131442 ↗
9. Kinetics of thermal growth of HCl-O2 oxides on silicon10.1149/1.2403311 ↗
10. The structure and composition of silicon oxides grown in HCL/O2 ambients10.1149/1.2131312 ↗
11. Auger analysis of chlorine in ‘HCl- or Cl2-grown’ SiO2 films10.1063/1.1654681 ↗
12. Summary abstract: Auger sputter profiling studies of SiO2 grown in O2/HCl mixtures10.1116/1.570966 ↗
13. Chlorine concentration profiles in HCl/O2 and HCl/H2O thermal silicon oxides using SIMS measurements10.1149/1.2131356 ↗
14. Properties of SiO2 grown in the presence of HCl or Cl210.1149/1.2134196 ↗
15. A model of silicon oxidation in chlorine-containing ambients: competition between two oxidants
16. Oxidation of single crystal SiC, part I: Experimental results10.1149/1.2086568 ↗
17. High temperature corrosion of SiC based ceramics in chlorine containing environments
18. The behavior of SiC and Si3N4 ceramics in mixed oxidation/chlorination environments
19. Oxidation of SiC ceramic heat exchanger materials in the presence of chlorine at 1300°C
20. A Fortran program for analysis of ellipsometric measurements
21. Index of refraction of fused quartz glass for ultraviolet, visibles and infrared wavelength10.1364/JOSA.44.000677 ↗
22. Ellipsometric investigation of silicon carbide single crystal
23. Spanler · Ellipsometry. Industr. Res. · 1975 · 17 · 73
24. Gas phase composition considerations in the thermal oxidation of silicon in Cl-H-O ambients10.1149/1.2133358 ↗