The effect of Mo and Ge reactive elements on high-temperature oxidation of higher manganese silicide
Source abstract
Abstract
Higher manganese silicide (HMS) alloys (Mnx-αMoαSiy-βGeβ (x = 0.99–1.011, α = 0.005–0.02, y = 1.75, β = 0.005–0.01)) were studied to elucidate the effect of Mo and Ge pertaining to oxidation. Oxidation experiments were conducted using thermogravimetry and characterized using x-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). Isoconversion experiments below 450 °C, shows that doping (up to 2 at%) raises the oxidation potential of HMS. Isothermally, the oxidation rate reduces buy one order of magnitude by doping on Mn and/or Si sites from 0.5 to 2 at%, revealing that the dopants-based oxides do not lessen the robustness of SiO2 oxide.
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Research context
OpenAlex topics: Semiconductor materials and interfaces · Semiconductor materials and devices · Intermetallics and Advanced Alloy Properties
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