Investigation of the passive layer on a solid-state sintered silicon carbide ceramic formed in sulfuric acid
Source abstract
Abstract
Abstract The presented work considers the electrochemical oxidation of solid-state sintered silicon carbide as a widely used structural material. The passive behavior, oxide formation and the structure of the near-surface region are characterized by means of cyclic voltammetry, electrochemical impedance spectroscopy, and XPS studies. Electrochemical measurements and complementary surface analytical studies reveal the formation of a near-surface region which can be described as amorphous non-stoichiometric SiOx, SiOxCy. After polarization at 1500 mVSCE the thickness of this oxidized region is in the range of 4−5 nanometers. The formation reaction of SiC to SiOx is explained by a 4-electron mechanism under the formation of carbon. Additionally, anodic oxygen evolution must be assumed to 20 %–30 % efficiency at this potential.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and devices · Advanced ceramic materials synthesis · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (55)
Show source-provided references
1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: a review10.1016/0038-1101(96)00045-7 ↗
2. A critical review of ohmic and rectifying contacts for silicon carbide10.1016/0921-5107(95)01276-1 ↗
3. Silicon carbide as a new MEMS technology10.1016/S0924-4247(99)00335-0 ↗
4. Photochemical and electrochemical processes of excited dyes at semiconductor and Metal electrodes10.1111/j.1751-1097.1972.tb06302.x ↗
5. Charge transfer process at large band gap semiconductor electrodes: reactions at SiC-electrodes10.1016/0368-1874(75)85114-8 ↗
6. The rate of the photoelectrochemical generation of hydrogen at p-type semiconductor10.1149/1.2133652 ↗
7. Electrochemical properties of Silicon Carbide10.1149/1.1837367 ↗
8. Photoelectrochemical characterization of p- and n-doped single crystalline silicon carbide and photoinduced reductive dehalogenation of organic pollutants at p-doped silicon carbide10.1016/S0013-4686(01)00752-6 ↗
9. Electrochemical characterization of α-SiC in different electrolytes10.1016/j.ijhydene.2003.07.004 ↗
10. Simon · 2008 · 38
11. Recent progress in synthesis, properties and potential applications of SiC nanomaterials10.1016/j.pmatsci.2015.01.003 ↗
12. Silicon carbide nanowires as highly robust electrodes for microsupercapacitors10.1016/j.jpowsour.2012.12.085 ↗
13. Bottom-up synthesis of mesoporouscarbon/silicon carbide composite at low temperature for supercapacitor electrodes10.1016/j.matlet.2017.04.011 ↗
14. Performance characteristics of supercapacitor electrodes made of silicon carbide nanowires grown on carbon fabric10.1016/j.jpowsour.2013.06.050 ↗
15. Silicon carbide and boron carbide based hard materials
16. Review on synthesis, structure, physical and chemical properties and functional characteristics of porous silicon carbide10.1016/j.jiec.2017.02.002 ↗
17. Zur Beständigkeit von Hochleistungskeramiken gegen Flüssigkorrosion
18. Zur Beständigkeit von Hochleistungskeramiken gegen Flüssigkorrosion
19. Corrosion behaviour of different technical ceramics in acids, basic solutions and under hydrothermal condition
20. Electrochemical corrosion of silicon carbide ceramics in H2SO410.1016/j.jeurceramsoc.2013.08.024 ↗
21. Electrically driven cold water corrosion of SiC
22. Electrochemical techniques for corrosion rate determination in ceramics10.1111/j.1151-2916.1989.tb06217.x ↗
23. Corrosion of silicon carbide ceramics using conventional and electrochemical methods10.1179/000705994798267692 ↗
24. Electrochemical corrosion testing of slid state sinterd silicon arbide in acidic and alkaline environments
25. Electrochemical corrosion of liquid phase sintered silicon carbide ceramics
26. Antelmann · 1982 · 101
27. Bard · 1985 · 189
28. Electrochemical impedance spectroscopy of 6H-SiC in aqueous hydrofluoric acid10.1149/1.1396652 ↗
29. Electrochemical corrosion of solid and liquid phase sintered silicon carbide in acidic and alkaline environments10.1016/j.jeurceramsoc.2006.07.011 ↗
30. Electrochemical Properties of sintered polycrystalline α–SiC10.1007/s11106-005-0011-8 ↗
31. In situ monitoring and depth-resolved characterization of wet wear of silicon carbide10.1016/j.wear.2011.01.080 ↗
32. Sintered silicon carbide for slide bearings and seal rings10.1016/S1350-4789(00)80015-X ↗
33. Dense SiC-ceramics with specifically adjusted electrical resistance (or electrical conductivity)
34. http://www.chemie.de/lexikon/Siliciumdioxid.html 07.02.2017.
35. High-resolution Electron microscopy and scanning tunneling microscopy of native oxides on silicon10.1126/science.237.4815.630 ↗
36. Bockris · 1993
37. Charge transfer processes at large band gap semiconductor electrodes: reactions at SiC-electrodes10.1016/0368-1874(75)85114-8 ↗
38. Lide · 1992 · 12
39. Integration of Cu/SiOC in Cu dual damascene interconnect for 0.1-μm technology10.1016/S0167-9317(02)00769-4 ↗
40. Thin silica films on Ru(0001): monolayer, bilayer and three-dimensional networks of [SiO4] tetrahedral10.1039/c2cp41355h ↗
41. Growth of native oxide on silicon surface10.1063/1.347181 ↗
42. The formation of hydrogen passivated silicon single-crystal surfaces using ultraviolet cleaning and HF etching10.1063/1.341489 ↗
43. Hollemann · 1985 · 757
44. Zhang · 2001 · 119
45. Stability, reactivity and breakdown of passive films. Problems of recent and future research10.1016/S0013-4686(00)00347-9 ↗
46. Einfluß Von Oxidschichten Auf Elektrodenprozesse10.1002/cite.330510616 ↗
47. The influence of the microstructure on the corrosion behaviour of Fe-25Cr10.1016/0010-938X(92)90110-O ↗
48. Anodic oxidation of hydrogenated amorphous silicon and properties of oxide10.1149/1.2095631 ↗
49. The electrical conductivity of silica gel in the presence of adsobed water10.1021/j100856a051 ↗
50. XPS studies on SiOx thin films10.1016/0169-4332(93)90431-A ↗
51. Basic Assumptions and Recent Developments in Quantitative XPS10.1002/sia.740040402 ↗
52. An ESCA method for determining the oxide thickness on aluminum alloys10.1002/sia.740150109 ↗
53. Characterization of (3-SiC surfaces and the Au/SiC interface10.1116/1.573958 ↗
54. The air‐exposed surface of sputter deposited silicon carbide studied by x‐ray photoelectron spectroscopy10.1116/1.577625 ↗
55. 2000