High temperature oxidation of higher manganese silicides
Source abstract
Abstract
The oxidation kinetics and mechanisms of higher manganese silicides (HMS) MnSi1.75, MnSi (1.75-x)Gex, MnSi(1.75-x)Alx (with x = 0.005 and 0.01)were studied and the effects of densification methods and dopant concentration discussed. Oxidation experiments were conducted using thermogravimetry (TGA), while post characterization with X-ray Photoelectron Spectroscopy (XPS) and Scanning Electron Microscope (SEM) showed that spark plasma sintering (SPS) is a better densification method than hot pressing (HP). Except for undoped HMS, HMS doped with 0.5at% Ge had the lowest oxidation rate. Stable formation of a SiO2 protective layer was the main reason for improved oxidation resistance in air in the temperature range 200 °C–500 °C.
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Research context
OpenAlex topics: Semiconductor materials and interfaces · Intermetallics and Advanced Alloy Properties · High-Temperature Coating Behaviors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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